MII 61113-005, 61113-004, 61113-003, 61113-002, 61113-001 Datasheet

61113

SURFACE MOUNT PACKAGE
(2N2369AUB)

GENERAL PURPOSE (NPN) TRANSISTOR

Mii

OPTOELECTRONIC PRODUCTS

DIVISION

Features:

Applications:

• Hermetically sealed

• Hermetically sealed 3 pin LCC

• MIL-PRF-19500 screening available

DESCRIPTION

The 61113 is a N-P-N, general-purpose switching and amplifier transistor in a 3 pin leadless chip carrier package. All
packages are hermetically sealed for high reliability and harsh environments. This device is available custom binned to
customer specifications in commercial or screened to MIL-PRF-19500 up to JANS level.

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage - V
Collector-Emitter Voltage - V
Collector-Emitter Voltage - V
Emitter-Base Voltage - V
Collector Current – I

Continuous Collector Current ................................................................................................................................................ 200mA

Maximum Junction Temperature........................................................................................................................................... +200°C

Operating Temperature (See part selection guide for actual operating temperature)............................................ -65°C to +125°C

Storage Temperature............................................................................................................................................... -65°C to +200°C

Lead Soldering Temperature (vapor phase reflow for 30 seconds) .......................................................................................215°C

C(Peak)

................................................................................................................................................. 40Vdc

CBO

.............................................................................................................................................. 15Vdc

CEO

.............................................................................................................................................. 40Vdc

CES

................................................................................................................................................... 4.5Vdc

EBO

....................................................................................................................................................... 500mA

• Analog Switches

• Signal Conditioning

• Small Signal Amplifiers

• High Density Packaging

Package Dimensions Schematic Diagram

ORIENTATION KEY

0.125 [3.18]

0.115 [2.92]

ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]

0.054[1.37]

0.046 [1.17]

3

0.105 [2.67]

0.085 [2.16]

12

0.024 [0.61]

0.016 [0.41]

3 PLACES

0.036 [0.91]

0.024 [0.61]

C

E

B

3

2

1

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com

E-MAIL: [e-mail]

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61113

SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2369AUB)

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified.

PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Sustaining Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

BV

BV

BV

BV

I

CBO

I

CES

CBO

CEO

CES

EBO

40 V

40 V

15 V

4.5 V

0.4

30

0.4

I

= 10µA, I

= 20V, I

CB

C

I

= 10µA , I

C

I

= 10mA , I

C

I

= 0, I

C

CB

= 20V, IE = 0

CE

dc

dc

dc

dc

AV

µ

AV

µ

AV

µ

= 0

E

= 0µA

B

= 0µA

B

= 10µA

E

= 0, TA = 150°C

E

= 20V

Forward-Current Transfer Ratio

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL-SIGNAL CHARACTERISTICS

Current-Gain – Bandwidth Product

Input Capacitance

(Output Open Capacitance)

Turn-On Time

Turn-Off Time

NOTES:

1.

Pulse width

300µs, duty cycle < 2.0%.

<

h

h

h

h

h

V

CE (SAT)

V

CE (SAT)

V

CE (SAT)

V

CE (SAT)

V

BE (SAT)

V

BE (SAT)

V

BE (SAT)

V

BE (SAT)

C

IBO

t

on

t

off

fe4

fe6

f

fe

fe

fe

-120 - V

20 - VCE = 1V, IC = 100mA

20 - VCE = 2V, IC = 100mA

= 1V, IC = 10mA

CE

20 - VCE = 1V, IC = 10mA @ -55ºC 1

30 - V

0.20 V IC = 10mA, I

0.30 V IC = 10mA, I

0.25 V IC = 30mA, I

0.50 V IC = 100mA, I

0.7 0.85 V IC = 10mA, I

0.59 - V IC = 10mA, I

1.02 V IC = 10mA, I

1.15 V IC = 30mA, I

1.60 V IC = 100mA, I

r

500 MHz VCB = 10V, 100kHz, < f < 1 MHz

= 0.35V, IC = 10mA @ -55ºC

CE

= 1mA 1

B

= 1mA @ +125ºC

B

= 3mA

B

= 10mA 1

B

= 1mA 1

B

= 1mA @ +125ºC

B

= 1mA @ -55ºC

B

= 3mA

B

= 10mA 1

E

25 pF VEB = 0.5 V, 100kHz, < f < 1 MHz

35 nS V

= 30V, IC = 150mA,

CC

IB1 = 15mA

300 nS VCC = 30V, IC = 150mA,

IB1 = IB2 = 15mA

SELECTION GUIDE

PART NUMBER PART DESCRIPTION

61113-001 2N2369AUB PNP transistor, commercial version
61113-002 2N2369AUB PNP transistor, JAN level screening
61113-003 2N2369AUB PNP transistor, JANTX level screening
61113-004 2N2369AUB PNP transistor, JANTXV level screening
61113-005 2N2369AUB PNP transistor, JANS level screening

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

Also available in dual and quad configurations upon request. Can also be supplied in gull wing surface mount versions.

NOTE:

www.micropac.com

E-MAIL: [e-mail]

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