MII 61090-300, 61090-102, 61090-101, 61090-002, 61090-001 Datasheet
61090
GENERAL PURPOSE TRANSISTOR
(2N2222AUB)
SURFACE MOUNT (NPN)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Applications:
• Hermetically sealed
• Miniature package to minimize circuit board area
• Ceramic surface mount package
• Footprint and pin-out matches SOT-23 packaged
transistors
• MIL-PRF-19500 screening available
• Analog Switches
• Signal Conditioning
• Small Signal Amplifiers
• High Density Packaging
DESCRIPTION
The 61090 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic
package is ideal for designs where board space and device weight are important requirements. This device is available
custom binned to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage ...............................................................................................................................................................75V
Collector-Emitter Voltage............................................................................................................................................................50V
Emitter-Collector Voltage..............................................................................................................................................................6V
Continuous Collector Current ............................................................................................................................................... 800mA
C above 25°C) .................................................................................. 500mW
Power Dissipation (Derate at the rate of 3.33 mW/
Maximum Junction Temperature..........................................................................................................................................+200
Operating Temperature (See part selection guide for actual operating temperature) ......................................... -65
Storage Temperature............................................................................................................................................. -65
Lead Soldering Temperature (vapor phase reflow for 30 seconds) ..................................................................................... 215
Package Dimensions Schematic Diagram
°
C
°
C to +200°C
°
C to +200°C
°
C
°
ORIENTATION KEY
0.105 [2.67]
0.085 [2.16]
0.125 [3.18]
0.115 [2.92]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
0.054 [1.37]
0.046 [1.17]
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12
www.micropac.com
0.036 [0.91]
0.024 [0.61]
3 PLACES
0.024 [0.61]
0.016 [0.41]
E-MAIL: optosales@micropac.com
C
E
B
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3
2
1
61090
SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUB)
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
BV
BV
BV
I
CBO
I
CES
I
EBO
CBO
CEO
EBO
75 V
50 V
6V
10 nA
10
µ
A
50 nA
10 nA
IC = 10µA, I
IC = 10mA, I
IC = 0, I
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
VCE = 50V
VEB = 4.0V, IC =0
E
= 0
E
= 0µA
B
= 10µA
Forward-Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL-SIGNAL CHARACTERISTICS
Small Signal Forward Current Transfer Ratio
Small Signal Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance (Output Open Capacitance)
Turn-On Time
Turn-Off Time
NOTES:
1. Pulse width < 300µs, duty cycle < 2.0%.
PARAMETER SYMBOL MIN MAX UNITS
Bias Voltage-Collector/Emitter I
Collector-Emitter Voltage V
PART NUMBER PART DESCRIPTION
61090-001 2N2222AUB PNP transistor, commercial version
61090-002 2N2222AUB PNP transistor, JAN level screening
61090-101 2N2222AUB PNP transistor, JANTX level screening
61090-102 2N2222AUB PNP transistor, JANTXV level screening
61090-300 2N2222AUB PNP transistor, JANS level screening
h
h
h
h
h
h
V
CE (SAT)
fe1
fe2
fe3
fe4
fe5
fe6
50 -
75 325 -
100 -
100 300 -
30 -
35 -
0.30 V
1.0 V
V
BE (SAT)
0.6 1.20 V
2.0 V
50 -
2.5 -
8pf
25 pf
35 ns
300 ns
C
C
h
fe
h
fe
OBO
IBO
t
on
t
off
RECOMMENDED OPERATING CONDITIONS:
C
CE
10 150 mA
520 V
SELECTION GUIDE
VCE = 10V, IC = 0.1mA
VCE = 10V, IC =1mA
VCE = 10V, IC =10mA
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
VCE = 10V, IC = 10mA @ -55°C
IC = 150mA, I
IC = 500mA, I
IC = 150mA, I
IC = 500mA I
= 15mA
B
= 50mA
B
= 15mA
B
= 50mA
B
VCE = 10V, IC = 1mA, f = 1kHz
VCE = 20V, IC = 20mA,
f = 100kHz
VCB = 10V, 100kHz, < f < 1 MHz
VEB = 0.5 V, 100kHz, < f < 1 MHz
VCC = 30V, IC = 150mA,
IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
1
1
1
1
1
1
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
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