MII 61089-103, 61089-102, 61089-101, 61089-002, 61089-001 Datasheet

61089

GENERAL PURPOSE TRANSISTOR
(2N2907AUB)

SURFACE MOUNT (PNP)

Mii

OPTOELECTRONIC PRODUCTS

DIVISION

Features:

Applications:

• Hermetically sealed

• Miniature package to minimize circuit board area

• Ceramic surface mount package

• Footprint and pin-out matches SOT-23 packaged

transistors

• MIL-PRF-19500 screening available

• Analog switches

• Signal conditioning

• Small signal amplifiers

• High density packaging

DESCRIPTION

The 61089 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic
package is ideal for designs where board space and device weight are important requirements. This device is available
custom binned to customer specifications or screened to MIL-PRF-19500.

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage ...............................................................................................................................................................60V

Collector-Emitter Voltage............................................................................................................................................................60V

Emitter-Collector Voltage..............................................................................................................................................................5V

Continuous Collector Current ............................................................................................................................................... 600mA

Power Dissipation (Derate at the rate of 3.33 mW/°C above 25°C) .................................................................................. 400mW

Maximum Junction Temperature............................................................................................................................................200°C

Operating Temperature (See part selection guide for actual operating temperature) ......................................... -65°C to +200°C

Storage Temperature............................................................................................................................................. -65°C to +200°C

Lead Soldering Temperature (vapor phase reflow for 30 seconds) .....................................................................................215°C

Package Dimensions Schematic Diagram

0.054[1.37]

ORIENTATION KEY

0.105 [2.67]

0.085 [2.16]

0.125 [3.18]

0.115 [2.92]

ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

0.046 [1.17]

3

12

www.micropac.com

0.024 [0.61]

0.016 [0.41]

E-MAIL: [e-mail]

3 PLACES

0.036 [0.91]

0.024 [0.61]

B

1

8 - 6

C

E

3

2

61089

SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (TYPE 2N2907AUB)

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified.

PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

BV

BV

BV

I

CBO

I

CES

I

EBO

CBO

CEO

EBO

60 V

60 V

5V

10 nA

10

µ

A

50 nA

50 nA

I

C

= 10mA, I

I

C

I

C

V

= 50V, IE = 0, T

V

CB

V

EB

= 10µA, I

= 0, I

= 50V, I

CB

V

= 4.0V, IC = 0

CE

B

= 10µA

E

= 50V

= 0

E

= 0µA

E

A

= 0

= 150°C

Forward-Current Transfer Ratio

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SMALL-SIGNAL CHARACTERISTICS

Small Signal Forward Current Transfer Ratio

Small Signal Forward Current Transfer Ratio

Open Circuit Output Capacitance

Input Capacitance (Output Open Capacitance)

Turn-On Time

Turn-Off Time

NOTES:

1.

Pulse width < 300µs, duty cycle < 2.0%.

h

h

h

h

h

h

V

CE (SAT)

V

BE (SAT)

h

h

C

OBO

C

IBO

t

on

t

off

fe1

fe2

fe3

fe4

fe5

fe6

75 -

100 450 -

100 -

100 300 -

50 -

50 -

0.40 V

1.60 V

1.30 V

2.60 V

fe

fe

100 -

2-

8pF

30 pF

45 ns

300 ns

V

= 10V, I

CE

V

CE

V

CE

V

= 10V, IC = 150mA

CE

VCE = 10V, IC = 500mA

= 10V, IC = 1mA @ -55°C

V

CE

= 150mA, I

I

C

I

= 500, I

C

IC = 150mA, I

IC = 500mA, I

VCE = 10V, IC = 1mA, f = 1kHz

VCE = 20V, IC =50mA,

VCB = 10V, 100kHz, < f < 1 MHz

V

= 2 V, 100kHz, < f < 1 MHz

CB

VCC = 30V, IC = 150mA,

VCC = 30V, IC = 150mA,

IB1 = I

= 0.1mA

C

= 10V, I

= 1mA

C

= 10V, IC = 10mA

= 15mA

B

= 50mA

B

= 15mA

B

= 50mA

E

100

f =

kHz

I

= 15mA

B1

= 15mA

B2

1

1

1

1

1

1

RECOMMENDED OPERATING CONDITIONS:

PARAMETER SYMBOL MIN MAX UNITS

Bias Voltage-Collector/Emitter I

Collector-Emitter Voltage V

C

CE

10 150 mA

520 V

SELECTION GUIDE

PART NUMBER PART DESCRIPTION

61089-001 2N2907AUB PNP transistor, commercial version
61089-002 2N2907AUB PNP transistor, JAN level screening
61089-101 2N2907AUB PNP transistor, JANTX level screening
61089-102 2N2907AUB PNP transistor, JANTXV level screening
61089-103 2N2907AUB PNP transistor, JANS level screening

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com

E-MAIL: [e-mail]

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