MII 61084-101, 61084-002, 61084-001, 61084-300, 61084-102 Datasheet

61084

GENERAL PURPOSE TRANSISTOR
(2N2222AUA)

SURFACE MOUNT (NPN)

Mii

OPTOELECTRONIC PRODUCTS

DIVISION

Features:

Applications

• Hermetically sealed

• Miniature package to minimize circuit board area

• Ceramic surface mount package

• MIL-PRF-19500 screening available

• Analog switches

• Signal conditioning

• Small signal amplifiers

• High density packaging

DESCRIPTION

The 61084 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic
package is ideal for designs where board space and device weight are important requirements. This device is available
custom binned to customer specifications or screened to MIL-PRF-19500.

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage ........................................................................................................................................................... 75V

Collector-Emitter Voltage........................................................................................................................................................50V

Emitter-Collector Voltage..........................................................................................................................................................6V

Continuous Collector Current ............................................................................................................................................800mA

Power Dissipation (Derate at the rate of 3.33 mW/°C above 25°C) ...............................................................................500mW

Maximum Junction Temperature......................................................................................................................................+200°C

Operating Temperature (See part selection guide for actual operating temperature) ......................................-65°C to +200°C

Storage Temperature......................................................................................................................................... -65°C to +200°C

Lead Soldering Temperature (vapor phase reflow for 30 seconds) ................................................................................. 215°C

PIN 1

IDENTIFIER

0.028 [0.17]

0.022 [0.56]

Package Dimensions Schematic Diagram

0.225 [5.72]

1

4

0.215 [5.46]

0.088 [2.24]

0.072 [1.83]

0.155 [1.40]

0.145 [3.68]

0.048 [1.22]

0.032 [0.81]

2

0.055 [1.40]

3

0.045 [1.14]

3 PL

0.075 [1.91]

0.061 [1.55]

B

3

1

C

E

2

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com

E-MAIL: [e-mail]

8 - 4

61084

SURFACE MOUNT NPN GENERAL PURPOSE TRANSISTOR (TYPE 2N2222AUA)

ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

Forward-Current Transfer Ratio

Collector-Emitter Saturation Voltage

TA = 25°C unless otherwise specified.

BV

CBO

BV

BV

I

CBO

I

CES

I

EBO

h

fe1

h

fe2

h

fe3

h

fe4

h

fe5

h

fe6

V

CE (SAT)

CEO

EBO

75 V I

50 V I

6VI

50 - V

75 325 - V

100 - VCE = 10V, IC = 10mA

100 300 - VCE = 10V, I

30 - VCE = 10V, IC = 500mA 1

35 - VCE = 10V, I

= 10µA, IE = 0

C

= 10mA, I

C

= 0, IE = 10µA

C

= 0µA

B

10 nA VCB = 60V, IE = 0

10

µ

AV

= 60V, I

CB

= 0, TA = 150°C

E

50 nA VCE = 50V

10 nA VEB = 4.0V, IC = 0

= 10V, I

CE

= 10V, I

CE

0.30 V IC = 150mA, I

= 0.1mA

C

= 1mA

C

= 150mA 1

C

= 1mA @ -55°C

C

=15mA 1

B

Base-Emitter Saturation Voltage

SMALL-SIGNAL CHARACTERISTICS

Small Signal Forward Current Transfer Ratio

Small Signal Forward Current Transfer Ratio

Open Circuit Output Capacitance

Input Capacitance (Output Open Capacitance)

Turn-On Time

Turn-Off Time

NOTES:

1. Pulse width < 300µs, duty cycle < 2.0%.

PARAMETER SYMBOL MIN MAX UNITS

Bias Voltage-Collector/Emitter I

Collector-Emitter Voltage V

PART NUMBER PART DESCRIPTION

61084-001 2N2222AUA PNP transistor, commercial version
61084-002 2N2222AUA PNP transistor, JAN level screening
61084-101 2N2222AUA PNP transistor, JANTX level screening
61084-102 2N2222AUA PNP transistor, JANTXV level screening
61084-300 2N2222AUA PNP transistor, JANS level screening

1.0 V I

V

BE (SAT)

0.6 1.20 V I

2.0 V I

C

C

h

fe

h

fe

OBO

IBO

t

on

t

off

50 - VCE = 10V, I

2.5 - VCE = 20V, IC = 20mA,

8pFV

25 pF VEB = 0.5 V, 100kHz, < f < 1 MHz

35 ns VCC = 30V, IC = 150mA,

300 ns VCC = 30V, I

RECOMMENDED OPERATING CONDITIONS:

C

CE

SELECTION GUIDE

10 150 mA

520 V

= 500, I

C

= 150mA, I

C

= 500mA, IE = 50mA 1

C

= 50mA 1

B

= 15mA 1

B

= 1mA, f = 1kHz

C

f = 100kHz

= 10V, 100kHz, < f < 1 MHz

CB

I

= 15mA

B1

= 150mA,

C

I

= I

= 15mA

B1

B2

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com

E-MAIL: [e-mail]

8 - 5