MII 61083-300, 61083-102, 61083-101, 61083-002, 61083-001 Datasheet
61083
GENERAL PURPOSE TRANSISTOR
(2N2907AUA)
SURFACE MOUNT (PNP)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Applications:
• Hermetically sealed
• Miniature package to minimize circuit board area
• Ceramic surface mount package
• MIL-PRF-19500 screening available
• Analog Switches
• Signal Conditioning
• Small Signal Amplifiers
• High Density Packaging
DESCRIPTION
The 61083 is a hermetically sealed ceramic surface mount general purpose switching transistor. This miniature ceramic
package is ideal for designs where board space and device weight are important requirements. This device is available
custom binned to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage ...............................................................................................................................................................60V
Collector-Emitter Voltage............................................................................................................................................................60V
Emitter-Collector Voltage..............................................................................................................................................................5V
Continuous Collector Current ............................................................................................................................................... 600mA
Power Dissipation (Derate at the rate of 2.28 mW/°C above 25°C) .................................................................................. 400mW
Maximum Junction Temperature............................................................................................................................................200°C
Operating Temperature (See part selection guide for actual operating temperature) ......................................... -65°C to +200°C
Storage Temperature............................................................................................................................................. -65°C to +200°C
Lead Soldering Temperature (vapor phase reflow for 30 seconds) .....................................................................................215°C
PIN 1
IDENTIFIER
0.028 [0.17]
0.022 [0.56]
Package Dimensions Schematic Diagram
0.225 [5.72]
0.215 [5.46]
0.155 [1.40]
0.145 [3.68]
0.048 [1.22]
0.032 [0.81]
1
4
0.088 [2.24]
0.072 [1.83]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
2
3
0.055 [1.40]
0.045 [1.14]
0.075 [1.91]
0.061 [1.55]
3 PL
B
3
1
C
E
2
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
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61083
SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR (TYPE 2N2907AUA)
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
BV
BV
BV
I
CBO
CBO
CEO
EBO
60 V I
60 V I
5VI
= 10µA, I
C
= 10mA, I
C
= 0, I
C
B
= 10µA
E
E
= 0µA
= 0
10 nA VCB = 50V, IE = 0
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current I
Forward-Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
I
CES
EBO
h
fe1
h
fe2
h
fe3
h
fe4
h
fe5
h
fe6
CE (SAT)
BE (SAT)
10
µ
AV
= 50V, IE = 0, TA = 150°C
CB
50 nA VCE = 30V
50 nA V
75 - VCE = 10V, I
100 450 - V
100 - V
= 3.5V, I
EB
C
= 10V, IC = 1mA
CE
= 10V, IC = 10mA
CE
= 0
C
= 0.1mA
100 300 - VCE = 10V, IC = 150mA 1
50 - VCE = 10V, IC = 500mA 1
50 - VCE = 10V, I
0.40 V I
1.60 V I
1.30 V I
2.60 V I
C
C
C
C
= 1mA @ -55°C
C
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, IE = 50mA 1
= 15mA 1
B
= 50mA 1
B
= 15mA 1
B
SMALL-SIGNAL CHARACTERISTICS
Small Signal Forward Current Transfer Ratio
Small Signal Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance (Output Open Capacitance)
Turn-On Time
Turn-Off Time
NOTES:
1. Pulse width < 300µs, duty cycle < 2.0%.
PARAMETER SYMBOL MIN MAX UNITS
Bias Voltage-Collector/Emitter I
Collector-Emitter Voltage V
PART NUMBER PART DESCRIPTION
61083-001 2N2907AUA, PNP transistor, commercial version
61083-002 2N2907AUA, PNP transistor, JAN level screening
61083-101 2N2907AUA, PNP transistor, JANTX level screening
61083-102 2N2907AUA, PNP transistor, JANTXV level screening
61083-300 2N2907AUA, PNP transistor, JANS level screening
C
C
h
fe
h
fe
OBO
IBO
t
on
t
off
100 - VCE = 10V, IC = 1mA, f = 1kHz
2-V
8PfV
30 Pf VEB = 2 V, 100kHz, < f < 1 MHz
45 Ns V
300 ns VCC = 30V, I
RECOMMENDED OPERATING CONDITIONS:
C
CE
SELECTION GUIDE
10 150 mA
520 V
= 20V, I
CE
=50mA,
C
f = 100kHz
= 10V, 100kHz, < f < 1 MHz
CB
= 30V, IC = 150mA,
CC
IB1 = 15mA
= 150mA,
C
IB1 = IB2 = 15mA
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
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