MII 61058-104, 61058-103, 61058-102, 61058-101, 61058-004 Datasheet

61058

(TYPE GS4021)

SILICON PHOTOTRANSISTOR

Mii

OPTOELECTRONIC PRODUCTS

DIVISION

Features:

Applications:

• Hermetically sealed

• High sensitivity

• Base lead provided for conventional transistor

biasing

• Incremental encoding

• Reflective sensors

• Position sensors

• Level sensors

• Narrow viewing angle

• Spectrally matched to the 62033 series LED.

DESCRIPTION

The 61058 is an N-P-N Planar Silicon phototransistor in a lensed TO-46 three-lead package. It is available in a range of
sensitivities and is ideal for use wherever high response, low dark current leakage, and low saturation characteristics are
required. Available custom binned to customer specifications or screened to MIL-PRF-19500.

ABSOLUTE MAXIMUM RATINGS

Storage Temperature..........................................................................................................................................-65°C to +150°C

Operating Temperature (See part selection guide for actual operating temperature) ......................................-65°C to +125°C

Collector-Emitter Voltage........................................................................................................................................................50V

Emitter-Collector Voltage..........................................................................................................................................................7V

Continuous Collector Current ..............................................................................................................................................50mA

Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW

Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C

0.230Ø [5.84]

0.209Ø [5.31]

Package Dimensions Schematic Diagram

0.210 [5.33]

0.170 [4.32]

0.195Ø [4.95]

0.178Ø [4.52]

ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]

0.030 [0.76] MAX

0.019 Ø [0.48]

0.016 Ø [0.41]

0.500 [12.70]
MIN

3 LEADS

COLLECTOR

3

2

BASE

EMITTER

THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE

Ø0.100 [Ø2.54]Ø0.100 [Ø2.54]Ø0.100 [Ø2.54]

1

45°

0.048 [1.22]

0.028 [0.71]

0.046 [1.17]

0.036 [0.91]

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com

E-MAIL: [e-mail]

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61058

SILICON PHOTOTRANSISTOR (TYPE GS4021)

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified.

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE

Light Current 61058-X01
61058-X02

I

L

61058-X03
61058-X04

BV

I

D

CEO

ECO

Dark Current 61058-XXX

Collector-Emitter Breakdown Voltage 61058-XXX

Emitter-Collector Breakdown Voltage 61058-XXX BV

Light Current Rise Time 61058-X01
61058-X02
61058-X03

t

r

61058-X04

Saturation Voltage 61058-XXX V

Angular Response 61058-XXX

CE (sat)

θ

NOTES:

1. Irradiance in mW/cm2 from a tungsten source at a color temperature of 2870K..

2. The angle between incidence for peak response and incidence for 50% of peak response.

100

PULSE RESPONSE TEST

CIRCUIT AND WAVEFORM

Vcc

H

DUT

OUTPUT

RL

IL

90%

10%

tr

tf

80

60

40

RELATIVE RESPONSE [%

20

0

1
4
8

15

30 V I

7VI

3.0

4.0

5.0

7.0

0.2 V I

10 degrees 2

ANGULAR RESPONSE RELATIVE SPECTRAL RESPONSE

-30 -20 -10 0 20 3010

ANGLE [DEGREES]

5
9

mA

V

CE

16

--

100 nA V

µ

sR

= 0.4mA, H = 5 mW/cm

C

100

90

80

70

60

50

40

30

RELATIVE RESPONSE [%]

20

10

0

40-40

= 5.0V, H = 5 mW/cm

= 10V, H = 0

CE

= 100µA

C

= 100µA

E

= 1KΩ, V

L

I

L

0.4 0.5 0.6 0.7 0.9 1.00.8

CC

= 1.0mA

WAVELENGTH [um]

= 5V,

2

1

2

1.10.30.2 1.2

COLLECTOR-EMITTER CHARACTERISTICS

10

8.0

6.0

4.0

2.0

C

I CO LLEC TOR CU RREN T [mA ]

0

0

H= 10 m W/cm 2

5.0

3.0

2.0

1.0

0.5

510

V COLLECTOR-EMITTER VOLTAGE [VOLTS]

CE

PARAMETER SYMBOL MIN MAX UNITS

Bias Voltage-Collector/Emitter I

Irradiance (H) H 15 25 mW/cm

PART NUMBER PART DESCRIPTION

61058-001 Silicon Phototransistor in TO-46 package, commercial version 1 to 5mA
61058-101
61058-002 Silicon Phototransistor in TO-46 package, commercial version 4 to 9mA
61058-102
61058-003 Silicon Phototransistor in TO-46 package, commercial version 8 to 16mA
61058-103
61058-004 Silicon Phototransistor in TO-46 package, commercial version 15+ mA
61058-104

versus TEMPERATURE

COLO R TEMP = 2870 k

TUNGSTEN SOURCE

15

20 25

2.0

1.8

1.6

1.4

1.2

1.0

0.8

L

I [NORMALIZED]

0.6

0.4

0.2

0

-100 -75 -25-50

Vcc = 5.0 V
NOTE 1

T AMBIENT TEMPERATURE [°C]

A

RECOMMENDED OPERATING CONDITIONS:

NORMALIZED LIGHT CURRENT

F

510 mA

SELECTION GUIDE

Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening

Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening

Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening

Silicon Phototransistor in TO-46 package (-55° to +125°C) with 100% screening

R =100

02550 75 150125100

IL Range

1 to 5mA

4 to 9mA

8 to 16mA

15+ mA

L

2

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com

E-MAIL: [e-mail]

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