MII 61055-106, 61055-105, 61055-104, 61055-103, 61055-101 Datasheet
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MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6 - 10
61055
SILICON PHOTOTRANSISTOR “PILL PACK”
(TYPE GS1020)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
REVISION B 02/22/01
Features:
• Hermetically sealed
• High sensitivity
• Small package
• Suitable for high-density pc board mounting
• Spectrally matched to the 62000 Series LED.
Applications:
• Incremental Encoding
• Reflective Sensors
• Position Sensors
• Level Sensors
DESCRIPTION
The 61055 is an N-P-N Planar Silicon Transistor in a package designed to be mounted in a double-clad printed circuit
board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark
current leakage, and low saturation voltage make this device ideal for interfacing with TTL circuits. Available custom binned
to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Temperature ....................................................................................................................................-55°C to +125°C
Collector-Emitter Voltage........................................................................................................................................................ 50V
Emitter-Collector Voltage.......................................................................................................................................................... 6V
Power Dissipation (Derate at the rate of 0.5 mW/°C above 25°C) ....................................................................................50mW
Lead Soldering Temperature (10 seconds) ....................................................................................................................... 240°C
Package Dimensions Schematic Diagram
0.088 [2.24]
0.082 [2.08]
0.115 [2.92]
0.102 [2.59]
0.010 [0.25]
0.005 [0.013]
0.240 [0.61]
0.016 [0.41]
COLLECTOR
CERAMIC
EMITTER
LENS
R0.010 ±0.001 [0.25]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
Ø0.061 [1.55]
Ø0.058 [1.47]
0.019 [0.48]
0.009 0.23]
0.092 [2.34]
0.084 [2.13]
0.067 [1.70]
0.063 [1.60]
C
E
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6 - 11
61055
SILICON PHOTOTRANSISTOR “PILL PACK” (TYPE GS1020)
REVISION B 02/22/01
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Light Current 61055-X01
61055-X02
61055-X03
61055-X04
61055-X05
61055-X06
I
L
0.5
2.0
4.0
7.0
12.0
20.0
3.0
5.0
8.0
12.0
20.0
--
mA
V
CE
= 5.0V, H = 20Mw/cm
2
1
Dark Current 61055-XXX
I
D
25 nA V
CE
= 30V, H = 0 1
Collector-Emitter Breakdown Voltage 61055-XXX BV
CEO
50 V I
C
= 100µA
Emitter-Collector Breakdown Voltage 61055-XXX BV
ECO
7VI
E
= 100µA
Light Current Rise Time 61055-X01
61055-X02
61055-X03
61055-X04
61055-X05
61055-X06
t
r
2.0
3.0
5.0
7.0
9.0
12.0
12.0
20.0
--
µ
sec R
L
= 1KΩ, V
CC
= 5V,
I
L
= 1.0mA
Saturation Voltage 61055-X0X V
CE (sat)
0.3 V I
C
= 0.4mA, H = 20mW/cm
2
Angular Response 61055-X0X
θ
24 degrees RL = 1KΩ, V
CC
= 5V,
I
L
= 1.0mA
2
NOTES:
1. Irradiance in mW/cm
2
from a tungsten source at a color temperature of 2870K.
2. The angle between incidence for peak response and incidence for 50% of peak response.
ANGULAR RESPONSE RELATIVE SPECTRAL RESPONSE
H
PULSE RESPONSE TEST
CIRCUIT AND WAVEFORM
DUT
RL
OUTPUT
Vcc
IL
tr
tf
10%
90%
-30 -20 -10 0 20 3010
0
20
40
60
100
ANGULAR RESPONSE
RELATIVE RESPONSE [%]
80
40-40
0.4 0.5 0.6 0.7 0.9 1.00.8
0
20
40
60
100
RELATIVE SPECTRAL RESPONSE
RELATIVE RESPONSE [%]
80
1.10.30.2 1.2
10
30
50
70
90
NORMALIZED LIGHT CURRENT
versus TEMPERATURE
°
-10 0 -7 5 -25-50
0
0.2
0.4
0.6
1.0
I [N ORM AL IZED ]
0.8
L
1.2
1.6
1.4
2.0
1.8
0 25 50 75 150125100
Vcc = 5.0 V
NOTE 1
R =100
L
NORMALIZED LIGHT CURRENT
versus RADIATION FLUX DENSITY
0.50.2 1.0
0.1
0.01
L LIGHT CURRENT [NORMALIZEDITO 20 mW/cm 2 TUNGST EN SOUR
C
1.0
10
1020 5.0 20
V =50 V
T =25°C
J
CC
TUNGSTEN
SOURCE
GaAs
SOURCE
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