MII 61053-104, 61053-103, 61053-102, 61053-101, 61053-004 Datasheet

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com

E-MAIL: [e-mail]

6 - 6

61053

SILICON PHOTOTRANSISTOR “PIGTAIL”

(TYPE GS3020)

Mii

OPTOELECTRONIC PRODUCTS

DIVISION

Features:

• Hermetically sealed

• High sensitivity

• Pigtail version available

• Suitable for high-density pc board mounting

• Spectrally matched to the 62017 Series LED.

Applications:

• Incremental encoding

• Reflective sensors

• Position sensors

• Level sensors

DESCRIPTION

The 61053 is an N-P-N Planar Silicon phototransistor in a package designed to be mounted in a double-clad printed circuit
board. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark
current leakage, and low saturation voltage make this device ideal for interfacing with TTL circuits. This sensor is also
available with a lead attached to the case so that it may be connected without the use of printed circuit boards. Available
custom binned to customer specifications or screened to MIL-PRF-19500.

ABSOLUTE MAXIMUM RATINGS

Storage Temperature..........................................................................................................................................-65°C to +150°C

Operating Temperature (See part selection guide for actual operating temperature) ......................................-65°C to +125°C

Collector-Emitter Voltage........................................................................................................................................................50V

Emitter-Collector Voltage.......................................................................................................................................................... 7V

Power Dissipation (Derate at the rate of 0.5 mW/

°

C above 25°C) ...................................................................................50mW

Lead Soldering Temperature (3 minutes) ......................................................................................................................... 240

°

C

Package Dimensions Schematic Diagram

Ø.025 [0.64]

0.114 [2.90]

0.100 [2.54]

0.089 [2.26]

OPTIONAL

ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]

Ø0.095 [Ø2.41]

Ø0.063 [Ø1.60]

Ø0.077 [Ø1.96]

1.000 [25.40]

C

E

E

C

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com

E-MAIL: [e-mail]

6 - 7

61053

SILICON PHOTOTRANSISTOR “PIGTAIL” (TYPE GS3020)

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified.

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE

Light Current 61053-X01
61053-X02
61053-X03
61053-X04

I

L

0.7

1.5

3.0

6.0

2.0

4.0

7.0

--

mA

V

CE

= 5.0V, H = 5 mW/cm

2

1

Dark Current 61053-XXX

I

D

25 nA

V

CE

= 30V, H = 0

Collector-Emitter Breakdown Voltage 61053-XXX

BV

CEO

50 V

I

C

= 100µA

Emitter-Collector Breakdown Voltage 61053-XXX

BV

ECO

7V

I

E

= 100µA

Light Current Rise Time 61053-X01
61053-X02
61053-X03
61053-X04

t

r

2.0

3.0

5.0

7.0

R

L

= 1KΩ, V

CC

= 5V,

I

L

= 1.0mA

Saturation Voltage 61053-X01

V

CE (sat)

0.3 V

IC = 0.4mA, H = 5 mW/cm

2

Angular Response 61053-X01

θ

12 degrees 2

NOTES:

1. Irradiance in mW/cm2 from a tungsten source at a color temperature of 2870K..

2. The angle between incidence for peak response and incidence for 50% of peak response.

ANGULAR RESPONSE RELATIVE SPECTRAL RESPONSE

H

PULSE RESPONSE TEST

CIRCUIT AND WAVEFORM

DUT

RL

OUTPUT

Vcc

IL

tr

tf

10%

90%

ANGLE [DEGREES]

-30 -20 -10 0 20 3010

0

20

40

60

100

RELATIVE RESPONSE [%

80

40-40

WAVELENGTH [um]

0.4 0.5 0.6 0.7 0.9 1.00.8

0

20

40

60

100

RELATIVE RESPONSE [%]

80

1.10.30.2 1.2

10

30

50

70

90

NORMALIZED LIGHT CURRENT

versus RADIATION FLUX DENSITY

0.50.2 1.0

0.1

0.01

L. LIGHT CU RRENT [NORMALIZED

I

N. RADIATI ON FLUX DENSITY [mW/cm 2]

TO 20 mW/cm 2 TUNGSTEN SOURCE]

1.0

10

1020 5.0 20

V =50 V

T =25°C

J

CC

TUNGSTEN

SOURCE

GaAs

SOURCE

NORMALIZED LIGHT CURRENT

versus TEMPERATURE

T AMBIENT TEMPERATURE [°C]

-100 -75 -25-50

0

0.2

0.4

0.6

1.0

I [NORMALIZED]

0.8

L

A

1.2

1.6

1.4

2.0

1.8

02550 75 150125100

Vcc = 5.0 V
NOTE 1

R =100

L

RECOMMENDED OPERATING CONDITIONS:

PARAMETER SYMBOL MIN MAX UNITS

Bias Voltage-Collector/Emitter I

F

510mA

Irradiance (H) H 15 25 mW/cm

2

SELECTION GUIDE

PART NUMBER PART DESCRIPTION IL Range

61053-001 Silicon Phototransistor in coax package, commercial version 0.7 to 2mA
66153-101

Silicon Phototransistor in coax package (-55° to +100°C) with 100% screening

0.7 to 2mA
61053-002 Silicon Phototransistor in pill package, commercial version 1.5 to 4mA
61053-102

Silicon Phototransistor in pill package (-55° to +100°C) with 100% screening

1.5 to 4mA
61053-003 Silicon Phototransistor in pill package, commercial version 3 to 7mA
61053-103

Silicon Phototransistor in pill package (-55 °to +100°C) with 100% screening

3 to 7mA
61053-004 Silicon Phototransistor in pill package, commercial version 6+mA
61053-104

Silicon Phototransistor in pill package (-55° to +100°C) with 100% screening

6+mA

NOTE: Add L following dash number ( e.g. -004L ) to indicate loop lead.