MII 61048-104, 61048-103, 61048-102, 61048-101, 61048-004 Datasheet
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61048
Features:
• Hermetically sealed
• High Sensitivity
• Base lead provided for conventional transistor
biasing
• Wide receiving angle for easy alignment
• Spectrally Matched to the 62030 Series LED.
DESCRIPTION
This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring a large (0.06” X 0.06”)
sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use
of external optics to focus radiation on the sensor. Available custom binned to customer specifications and/or screened to
MIL-PRF-19500.
SILICON PHOTOTRANSISTOR
(TYPE GS4123)
Applications:
• Incremental Encoding
• Reflective Sensors
• Position Sensors
• Level Sensors
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Temperature (See part selection guide for actual operating temperature)...................................... -65°C to +125°C
Collector-Emitter Voltage........................................................................................................................................................50V
Emitter-Collector Voltage..........................................................................................................................................................7V
Continuous Collector Current ..............................................................................................................................................50mA
Power Dissipation (Derate at the rate of 2.5 mW/°C above 25°C) ..................................................................................250mW
Lead Soldering Temperature (1/16” from case for 10 seconds)........................................................................................ 240°C
Package Dimensions Schematic Diagram
0.210 [5.33]
0.230Ø [5.84]
0.209Ø [5.31]
0.170 [4.32]
0.195Ø [4.95]
0.178Ø [4.52]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
0.030 [0.76] MAX
0.019 Ø [0.48]
0.016 Ø [0.41]
0.500 [12.70]
MIN
3 LEADS
3
2
BASE
EMITTER
THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
1
45°
COLLECTOR
Ø0.100 [Ø2.54]
Ø0.100 [Ø2.54]Ø0.100 [Ø2.54]
0.048 [1.22]
0.028 [0.71]
0.046 [1.17]
0.036 [0.91]
C
E
B
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
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61048
SILICON PHOTOTRANSISTOR (GS4123)
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Light Current
I
L
Dark Current I
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage BV
BV
D
CEO
ECO
Light Current Rise Time
t
r
Saturation Voltage V
Angular Response
CE (sat)
θ
NOTES:
1. Irradiance in mW/cm2 from tungsten source at a color temperature of 2870K.
2. The angle between incidence for peak response and incidence for 50% of peak response.
PULSE RESPONSE TEST
CIRCUIT AND WAVEFORM
BASE
OPEN
Vcc
H
DUT
OUTPUT
RL
IL
90%
10%
tr
tf
5
20
30
50
30 V I
7VI
8
10
15
20
0.2 V I
10 degrees 2
RELATIVE SPECTRAL RESPONSE ANGULAR RESPONSE
100
90
80
70
60
50
40
30
RELATIVE RESPONSE [%]
20
10
0
0.4 0.5 0.6 0.7 0.9 1.00.8
WAVELENGTH [um]
20
30
mA
V
= 5.0V, H = 20 mW/cm
CE
50
--
50 nA V
µ
sRL = 100Ω, V
= 0.4mA, H = 20 mW/cm
C
100
80
60
40
RELATIVE RESPONSE [%]
20
1.10.30.2 1.2
0
= 5V, H = 0
CE
= 100µA
C
= 100µA
E
= 5V, IL = 1.0mA
CC
-30 -20 -10 0 20 3010
ANGLE [DEGREES]
2
2
1
40-40-50 50
DARK CURRENT versus TEMPERATURE
10
1.0
0.1
0.01
0.001
I
0.0001
CEO. COLLECTOR DARK CURRENT [uA]
0.00001
-25-50 1251007525 500
A
T - AMBIENT TEMPERATURE - °C
V =30 V
CC
M = 0
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Bias Voltage-Collector/Emitter I
Irradiance (H) H 15 25 mW/cm
PART NUMBER PART DESCRIPTION IL Range
61048-001 Silicon Phototransistor in TO-46 package, commercial version 5 to 20mA
61048-101 Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening 5 to 20mA
61048-002 Silicon Phototransistor in TO-46 package, commercial version 20 to 30mA
61048-102
61048-003 Silicon Phototransistor in TO-46 package, commercial version 30 to 50mA
61048-103
61048-004 Silicon Phototransistor in TO-46 package, commercial version +50mA
61048-104 Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening +50mA
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
Silicon Phototransistor in TO-46 package (-55° to +100°C) with 100% screening
COLLECTOR EMITTER CHARACTERISTICS
F
SELECTION GUIDE
SOURCE TEMP - 2870
TUNGSTEN SOURCE
8.0
6.0
4.0
C
I COLLECTOR CURRENT [mA]
2.0
0
0
T = 25°C
A
510
151020 25
H = 10 mW
H = 50
H = 20
H = 10
3530
510 mA
2
20 to 30mA
30 to 50mA
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
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