Microsemi UPF1N50 Datasheet

UPF1N50

WATERTOWN DIVISION

DESCRIPTION

DESCRIPTION

DESCRIPTIONDESCRIPTION

SURFACE MOUNT N CHANNEL MOSFET

Power MOSFET in ultra low profile patented Powermite 3(TM) package
provides the designer with the best combination of fast Switching,
ruggedized device design, low on-resistance, cost effectiveness in the
industry's smallest high power surface mount package.

T he U PF 1N 50 is ide al for ultra sma ll motor contr ol and switch m ode powe r
supply applications.

The Powermite 3 is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. With power dissipation levels up to

1.8 Watts, the Powermite 3 offers similar power handling capability to device
4 times its size by using a patented full metal wrap around bottom.

IMPORTANT:

For the most current data, consult

MICROSEMI

’s website:

http://www.microsemi.com

MECHANICAL CHARACTER

MECHANICAL CHARACTERISTICS

POWERMITE 3 Surface Mount Package

• Footprint Area of 16.51 mm

• Case: Molded Epoxy

• Meets UL94VO at 1/8 inch

• Weight: 72 milligrams

• Lead and Mounting Temperatures: 260

MECHANICAL CHARACTERMECHANICAL CHARACTER

2

0

C max for 10 seconds

ISTICS

ISTICSISTICS

MAXIMUM RATINGS

MAXIMUM RATINGS

PARAMETER
Drain-to-Source Voltage V

Drain-to-Source Voltage V
Continuous Drain Current @ TC = 25ºC I
Continuous Drain Current @ TC = 100ºC I
Operating & Storage Junction Temperature Range T

Total Power Dissipa tion PD (1) 1.8 Watts

MAXIMUM RATINGSMAXIMUM RATINGS

SYMBOL

DSS

GS
D1
D2

J, TSTG

VALUE

500 Volts

+/-20 Volts

1.0 Amps

0.8 Amps

- 40 to + 125

THERMAL CHARACTERIST

THERMAL CHARACTERISTICS

S

TEADY-STATE THERMAL RESISTANCE

Junction-to-Tab Rθ
(1) Junction-to-ambient RθJA (1) 55 °C/Watt s
(2) Junction-to-ambient RθJA (2) 120 °C/Watt s

(1) Mounted on 2” square by 0.06’ thick FR4 board with a 1”× 1” square 2-ounce copper pattern.
(2) Mounted on 0.06’ thick FR4 boa rd, using recommended footprint.

THERMAL CHARACTERISTTHERMAL CHARACTERIST

:

SYMBOL

J-TAB

ICS

ICSICS

VALUE

2.0 °C/Watt s

PRELIMINARY

UNIT

ºC

UNIT

KEY FEATURES

KEY FEATURES

KEY FEATURES KEY FEATURES

!"POWERMI TE 3 Surface Mount

Package

!"Low On-State Resistance
!"High Frequency Switching
!"Ultra Low Leakage current
!"Integral Heat Sink / Locking

Tabs

!"Supplied in 16mm Tape and

Reel – 6000 units/reel

!"Superior Low Therma l And

Electrical capability

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITSSSS

APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT

• Motor Control

• Switch Mode Power Supplies

WWW.

Microsemi

.

COM

U

U

P

P

F

F

1

1

N

N

5

5

0

0

Copyright  2000
MSC1541.PDF 2000-08-08

Microsemi

W atertown Division

580 Pleasant Street, Watertown, MA. 02472, 617-926-0404, Fax: [phone]

Page 1

2

UPF1N50

WATERTOWN DIVISION

STATIC ELECTRICAL CH

STATIC ELECTRICAL CHARACTERISTICS

SYMBOL CHARACTERISTICS / TEST CONDITIONS

BV

V

GS(TH)2

V

GS(TH)1

R

DS(ON)1

I

DSS1

I

DSS2

I

GSS1

SYMBOL

Ciss

Coss

Crss

Qg
Qgs
Qgd

td (on)

tr

td

tf

VSD

trr

Qrr

Drain to Source Breakdown Voltage (VGS=0V, ID=0.25mA)

DSS

Gate Threshold Voltage (VDS≥VGS, ID=1mA, TJ=37°C )
Gate Threshold Voltage (VDS≥VGS, ID=1mA, TJ=25°C )
Drain to Source ON-State Resistance (VGS=10V, ID=1.0A , TJ=25°C )
Zero Gate Voltage-Drain Current (VDS=400V,VGS=0V,TJ= 25°C )
Zero Gate Voltage-Drain Current (VDS=400V,VGS=0V,TJ=125°C )
Gate to Source Leakage Current (VGS= ±20V, VDS=0V, TJ = 25°C )

Input Capacitance
Output Capacitance

Reverse Transfer Capacitance f = 1MHZ
Total Gate Charge

Gate to Source Charge
Gate to Drain Charge

Turn-ON Delay Time
Rise Time VGS= 10 V, VDS= 0.5 BV
Turn-OFF Delay Time ID = 20 mA
Fall Time
Diode Forward Voltage
Reverse Recovery Time IS = 1 A, dIs/dt = 100 A/us
Reverse Recovery Charge IS = 1 A, dIs/dt = 100 A/us

CHARACTERISTIC

STATIC ELECTRICAL CHSTATIC ELECTRICAL CH

STATIC ELECTRICAL CH

STATIC ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHSTATIC ELECTRICAL CH

VGS= 0 V
V

= 50 V

DS

= 10 V

V

GS

= 0.5 V

V

DS

ID= 10 mA
Resistive Switching (25°C)

Rg = 1.6 Ω
V

= 0 V, IS = 1 A, TJ = 25°C

GS

SURFACE MOUNT N CHANNEL MOSFET

PRELIMINARY

ARACTERISTICS

ARACTERISTICSARACTERISTICS

ARACTERISTICS

ARACTERISTICSARACTERISTICS

TEST CONDITIONS

DSS

DSS

UPF1N50

Min Typ Max

500

2.0 3.4 4.0 Volts

3.5 Volts

2 uA
250 uA

2.7 3.5 Ohms

±

100

Min Typ Max UNIT

200

30
15 20 pF
20

1.0
10

20 ns

10 ns
30 ns
30 us

0.85 1.2 V
150 ns

0.8 uC

Units

Volts

250

50

nC

nA

pF
pF

nC
nC

WWW.

Microsemi

.

COM

U

U

P

P

F

F

1

1

N

N

5

5

0

0

Copyright  2000
MSC1541.PDF 2000-08-08

Microsemi

W atertown Division

580 Pleasant Street, Watertown, MA. 02472, 617-926-0404, Fax: [phone]

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