Microsemi UPF1N100 Datasheet
580 Pleasant Street
Watertown, MA 02472
Phone:(617) 926-0404
F A X : (617) 924-1235
Features
Features
FeaturesFeatures
Rugged POWERMITE 3
•
Low On-State Resist ance
•
Avalanche and Surge Rated
•
High Frequency Switching
•
Ultra Low Leakage current
•
UIS rated
•
Available with Lot Acceptance Testing
•
Surface Mount Package
Description
This device is an N-Channel enhancement mode, high density MOSFET.
It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three
leaded package.
Maximum Ratings
UPF1N100
SURFACE MOUNT
N – CHANNEL
MOSFET
PARAMETER SYMBOL VALUE UNIT
Drain-to-Source Voltage V
GateContinuous Drain Current @ TC
Continuous Drain Current @ TC=100
-Source Voltage VGS +/- 20 Volts
to
= 25
C ID1 1.0 Amps
°°°°
C I
°°°°
Avalanche Current I
Repetitive Avalanche Energy E
Single Pulse Avalanche Energy E
Operating & Storage Junction Temperature Range T
Steady-state Thermal Resistance, Junction-to-Tab R
1000 Volts
DSS
0.27 Amps
D2
1.0 Amps
AR
3.5 mJ
AR
120 mJ
AS
, T
- 40 to +125
J
STG
2.5
θθθθ
J-TAB
C
°°°°
C/Watt
°°°°
Static Electrical Characteristics
SYMBOL CHARACTERISTICS / TEST CONDITIONS MIN TYP MAX UNIT
BV
V
GS(TH)2
V
GS(TH)1
R
DS(ON)1
R
DS(ON)2
R
DS(ON)3
R
DS(ON)4
R
DS(ON)5
I
DSS1
I
DSS2
I
GSS1
I
GSS2
I
GSS3
Drain to Source Breakdown Voltage (VGS=0V, ID=0.25mA) 1000 Volts
DSS
Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=37
Gate Threshold Voltage (VGS=VDS, ID=1mA, TJ=25
Drain to Source ON-State Resistance (VGS=10V, ID=ID 1 , TJ=25
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=37
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=25
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=60
Drain to Source ON-State Resistance (VGS=7V, ID=ID 1 , TJ=125
Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ= 25
Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ=125
Gate to Source Leakage Current (VGS=
Gate to Source Leakage Current (VGS=
Gate to Source Leakage Current
(VGS=
20V, VDS=0V, TJ = 25
±±±±
20V, VDS=0V, TJ = 37
±±±±
20V, VDS=0V, TJ=125
±±±±
°°°°
°°°°
C )
C )
C )
°°°°
°°°°
°°°°
°°°°
°°°°
°°°°
°°°°
C )
°°°°
°°°°
C )
°°°°
2 3.5 4.5 Volts
C)
C)
C)
C )
C )
C )
C )
3.4 Volts
12.5 13.5 Ohms
12.5 Ohms
11.5 Ohms
15.0 Ohms
25.5 Ohms
10.0 nA
25 uA
250 uA
100
±±±±
25 uA
nA
MSC 04-28-00
PRELIMINARY
UPF1N100
Dynamic Electrical Characteristics
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNIT
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on) Turn-ON Delay Time 6.3 ns
t r Rise Time 5.9 ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Resistive Switching (25
= 10 V, VDS= 0.5 BV
V
GS
td Turn-OFF Delay Time 315 ns
t f Fall Time
td (on) Turn-ON Delay Time 6.3 ns
t r Rise Time 5.8 ns
Resistive Switching (25
= 10 V, VDS= 0.5 BV
V
GS
td (off) Turn-OFF Delay Time 76 ns
t f Fall Time
V
SD
Diode Forward Voltage
V
= 0 V, IS = 1 A, TJ = 37
GS
t rr Reverse Recovery Time IS = 1 A, dIs/dt = 100 A/us 121 300 ns
Qrr Reverse Recovery Charge IS = 1 A, dIs/dt = 100 A/us 0.415 0.8 uC
= 0 V
V
GS
= 25 V
V
DS
f = 1MH
= 10 V
V
GS
= 0.5 V
V
DS
IC= 20 mA
ID = 20 mA
Rg = 1.6
ID = 100 mA
Rg = 1.6
Z
DSS
ΩΩΩΩ
ΩΩΩΩ
C)
°°°°
DSS
C)
°°°°
DSS
290
36
15
375
50
30
20
1.0
10
2.6 us
470 ns
C
°°°°
0.825 1.0 V
pF
pF
pF
nC
nC
nC
MSC 04-28-00
PRELIMINARY
MECHANICAL SPECIFICATIONS
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