Microsemi TVSF1206 Datasheet

WWW.

Microsemi

.

COM

RANSIENT PROTECTION PRODUCTS

T

DESCRIPTION

DESCRIPTION

The “FemtoFarad” product family is
specifically designed to protect sensitive
electronic circuits from the threat of
electrostatic discharge (ESD).
“FemtoFarad” products react almost
instantly to the transient voltage and
effectively clamp it below 60 V,
meaning less voltage stress during the
clamp period and greater IC protection.
The design of “FemtoFarad” products
inherently produces a low capacitance
part. In the off-state “FemtoFarad” is
virtually invisible to the circuit. Installed
from signal line to ground, the
“FemtoFarad” device exhibits a high
impedance and low capacitance that
makes it transparent to high-speed
digital circuits. Signals are not distorted
or disrupted.

DESCRIPTIONDESCRIPTION

With “FemtoFarad” devices,
waveform definition stays true and high­speed signals do not suffer.
“FemtoFarad” products utilize a unique
polymer-based material. The nature of
the material creates a bi-directional part,
which means that only one device is
required to provide complete ESD
protection regardless of the surge
polarity. The combination of this material
with proven thick film on ceramic
technology produces a reliable, surface
mount product that will help protect
mobile communications, computers, data
processing, test equipment, and many
other electronic applications from EDS.

“FemtoFarad Polymer ESD Suppressor

P

RODUCT PREVIEW

KEY FEATURES

KEY FEATURES

KEY FEATURES KEY FEATURES

!"

Exceeds testing
requirements outlined in IEC
61000-4-2

!"

Extremely low capacitance

!"

Very low leakage current

!"

Fast response time

!"

Bi-directional

!"

Surface mount

!"

Nickel & Tin/Lead plated

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITSSSS

APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT

!"

GaAs & InGaAs
Photodetector protection

!"

InGaP HBT Power Amplifier
Protection

!"

High Speed Data Line
Protection

!"

Mobile Phone ESD
protection

TVSF1206

IMPORTANT:

For the most current data, consult

MICROSEMI

’s website:

http://www.microsemi.com

Performance Characteristics Min Typ Max Units
Continuous operating voltage - - 6 VDC

Clamping voltage
Trigger voltage

ESD voltage capability
Capacitance (@ 1 MHz) - 0.25 1 pF
Leakage current (@ 6 VDC) - <10 <100 nA

Peak current
Operating temperature -40 +25 +85

ESD pulse withstand

Notes:

1. Per IEC 1000-4-2, 30A @ 8kV, level
4, clamping measurements made 30 ns
after initiation of pulse, all tests in
contact discharge mode.

2. Trigger measurement made using
TLP method (see page5).

3. Parts will remain within the
specifications listed in the above table
after a minimum of 20 ESD pulses.

4. TVSF1206 devices are capable of
with-standing up to a 15 kV, 45 A ESD
pulse. Device ratings are given at 8 kV
per Note 1 unless otherwise specified.

Part Ratings and Characteristics

1, 4

1

2

4

1,3

- 35 60 V

- 150 300 V

- 8 15 kV

- 30 45 A

20 - - # pulses

Environmental Specifications;

•

Humidity, steady state: MIL-STD-202F, Method 103B, 90-95% RH, 40°C, 96 hrs.

•

Thermal shock: MIL-STD-202, Method 107G, -65°C to 125°C, 30 min. cycle 5 cycles

•

Vibration: MIL_STD-202F, Method 201A, (10 to 55 to 10 Hz, 1 min. cycle, 2 hrs each in X-Y-Z)

•

Chemical resistance: ASTM D-543, 24 hrs @ 50°C, 3 solutions (H

•

Full Load voltage: 24 VDC, 1000 hrs, 25°C

•

Solder leach resistance and terminal adhesion: Per EIA-576

•

Solderability: MIL-STD-202, Method 208 (95% coverage)

°

C

0, detergent solution, defluxer)

2

T

T

V

V

S

S

F

F

1

1

2

2

0

0

6

6

Copyright  2000
MSC1591.PDF 2000-09-20

Microsemi

Scottsdale Division

8700 E. Thomas Road, Scottsdale, AZ. 85251, 480-940-6300, Fax: [phone]

Page 1

RANSIENT PROTECTION PRODUCTS

T

Definition of Terms:

Clamping Voltage –

stabilizes during the transition from high to low impedance. This is the
voltage experienced by the circuit, after stabilizing, for the duration of
the ESD transient.

Trigger Voltage –

begins to function. When the ESD threat voltage reaches this level, the
“FemtoFarad” device begins the transition from high impedance to low
impedance, shunting the ESD energy to ground.

Threat Voltage –

(i.e. the voltage across the discharge capacitor).

The voltage at which the “FemtoFarad” device

The voltage at which the “FemtoFarad” device

The voltage that the test equipment is set to operate

“FemtoFarad Polymer ESD Suppressor

P

RODUCT PREVIEW

TVSF1206

WWW.

Microsemi

.

COM

Copyright  2000
MSC1591.PDF 2000-09-20

Microsemi

Scottsdale Division

8700 E. Thomas Road, Scottsdale, AZ. 85251, 480-940-6300, Fax: [phone]

Page 2

P

P

A

A

C

C

K

K

A

A

G

G

E

E

D

D

A

A

T

T

A

A