Microsemi TSPDMEDA001-5 Datasheet
2830 S. Fairview St.
PH: (714) 979-8220
FAX: (714) 966-5256
Santa Ana, CA 92704
PRODUCT
CAPABILITY
Performance Advantages
• 50% real estate reduction over competition
• On State Dissipation is 1.5 to 2 times less than competition
• Switching Characteristics - (ton) - up to 10 times faster
• Can handle 3 times the surge as competition for the same physical area
• Custom designs in 3-4 weeks (competition does not offer custom arrangements)
Monolithic Flip Chip
SHEET
Thyristor Surge
Protection Device
Features
• Monolithic Flip Chip Construction, all contacts on one side
• Available with solderable surface
• Common Anode/Cathode available
• Available in 2, 3, 4, 5, 6, 8 element arrays (see outlines below)
• Available in 5-8.5 Volt versions
• Power Rating is 50 Joules at 37°C
• Also available in TVS (TVSMEDA Series)
for Implantable
Proposed Maximum Ratings @ 37°C-Body Temperature (unless otherwise specified)
Part Number VDRM VZ VBO IBO IH VT VT ITSM IR ton VC CO
@1 A @8 A @ VWM
Volts Volts Volts mA mA Volts Volts Amps nA nsec Volts pF
MAX MIN MAX MAX MIN MAX MAX MAX MAX MAX MAX MAX
TSPDMEDA001-5 5 6 8 20 1 3 6 30 100 500 10 100
TSPDMEDA001-7.5 7.5 8 12 20 1 3 6 30 100 500 15 100
TSPDMEDA001-8.5 8.5 9 12 20 1 3 6 30 100 500 15 100
Array
Applications
1kV/us @ 50Ω
@ 0V
Monolithic Flip Chip Configurations
(in development)
These Monolithic Arrays will feature
multiple devices on one chip with all
contacts on one surface. The
surfaces are available with a
solderable metal contact.
For more information on these
devices contact Microsemi's Santa
Ana division for custom
configurations and designs.
Max
2.5 mm
Max
5 mm
2 mm
Max
2 mm
Max
Input
Common
Cathode
Elementary
Cell
Schematic
Common
Anode
MSC0988.PDF
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