Microsemi TCP080A, TCP072A, TCP058A, TCP065A, TCP120A Datasheet
...
TCP058A thru TCP120A
This Thyristor Surge Suppressor device has been especially designed to
protect subscriber line cards against overvoltage. Two diodes clamp
positive overloads while negative surges are suppressed by two protection
thyristors.
Particular attention has been given to the internal wire bonding. The ”4point” configuration ensures a reliable protection, eliminating overvoltages
introduced by the parasitic inductances of the wiring (Ldi/dt), especially for
very fast transient overvoltages.
DESCRIPTION
DUAL ASYMETRICAL TRANSIENT
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
COMPLIES WITH THE FOLLOWING STANDARDS:
CCITT K20: 10/700 µs
VDE 0433:
VDE 0878:
I3124:
FCC part 68:
BELLCORE
TR-NWT-001089: 02/10 µs 2.5 kv
(*)
with series resistors or PTC.
5/310 µs
10/700 µs
5/310 µs
1.2/50 µs
1/20 µs
0.5/700 µs
0.2/310 µs
02/10 µs
02/10 µs
02/10 µs
10/1000 µs
10/1000 µs
1 kV
38 A
2 kV
50 A
1.5 kV
40 A
1 Kv
38 A
2.5 kv
125 A (*)
125 A (*)
1 kV
40 A (*)
UL94V-0 TCPxx packages comply with requirements of UL94V-0
SUPPRESSOR
PRODUCT PREVIEW
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
!"
DUAL ASYMETRICAL
TRANSIENT SUPPRESSOR
!"
PEAK PULSE CURRENT:
I
=40A,10/1000µs
PP
!"
HOLDING CURRENT:150mA
min.
!"
BREAKDOWN VOLTAGE:
TCP058A: 58 V
TCP065A: 65 V
TCP072A: 60 V
TCP082A: 70 V
TCP080A: 80 V
TCP120A: 120 V
!"
LOW DYNAMIC
CHARACTERISTICS
!"
STAND CCITT K20 AND
LSSGR
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
!"
WWW.
Microsemi
.
COM
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C
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P
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Copyright 2000
MSC1630.PDF 2000-11-30
Microsemi
Santa Ana Division
2830 S. Fairview Street, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
TCP058A thru TCP120A
Symbol Parameter Value Unit
I
PP
Peak pulse current (see note 1)
ABSOLUTE MAXIMUM RATINGS (T
I
TSM
Non repetitive surge peak on-state current F =
50 Hz
5/310 µs tr = 5µs tp = 310 µs
2/10 µs tr = 2µs tp = 10 µs
I
TSM
T
stg
T
j
T
L
Note 1: Pulse waveform:
10/1000 µs tr = 10 µs tp = 1000 µs
F=50Hz, 60x1s, 2mn between pulse 1 A
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s 260
Symbol Parameter Value Unit
R
(j-a)
th
Symbol Parameter
V
RM
I
RM
V
BR
V
BO
I
H
VF
VFP
I
BO
I
PP
C
α
T
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
Stand-off voltage
Leakage current at stand-offvoltage
Breakdown voltage
Breakover voltage
Holding current
Forward voltage drop
Peak forward voltage
Breakover current
Peak pulse current
Temperature coefficient
DUAL ASYMETRICAL TRANSIENT
SUPPRESSOR
PRODUCT PREVIEW
= 25°C)
amb
µ
10/1000
5/310
2/10
t = 300 ms
t = 1 s
t = 5 s
THERMAL RESISTANCES
Junction to ambient 170
Capacitance
s
µ
s
µ
s
40
50
125
10
50
1
-55 to + 150
150
°
C/W
A
WWW.
Microsemi
A
°
C
°
C
.
COM
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
Copyright 2000
MSC1630.PDF 2000-11-30
Microsemi
Santa Ana Division
2830 S. Fairview Street, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
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