Microsemi TCP009 Datasheet
Microsemi
Santa Ana Division
2830 S. Fairview Street, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
Copyright 2000
MSC1635.PDF 2000-12-01
WWW.
Microsemi
.
COM
TCP009A
DUAL ASYMETRICAL TRANSIENT
SUPPRESSOR FOR XDSL AND DATA LINES
PRODUCT PREVIEW
DESCRIPTION
This Thyristor Surge Suppressor device has been especially designed to
protect against overvoltage. Two diodes clamp positive overloads while
negative surges are suppressed by two protection thyristors.
Particular attention has been given to the internal wire bonding. The ”4point” configuration ensures a reliable protection, eliminating overvoltages
introduced by the parasitic inductances of the wiring (Ldi/dt), especially for
very fast transient overvoltages.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
COMPLIES WITH THE FOLLOWING STANDARDS:
(*)
with series resistors or PTC.
CCITT K20: 10/700 µs
1 kV
5/310 µs
38 A
VDE 0433:
10/700 µs
2 kV
5/310 µs
50 A
VDE 0878:
1.2/50 µs
1.5 kV
1/20 µs
40 A
I3124:
0.5/700 µs
1 Kv
0.2/310 µs
38 A
FCC part 68:
02/10 µs
2.5 kv
02/10 µs
125 A (*)
BELLCORE
TR-NWT-001089: 02/10 µs 2.5 kv
02/10 µs
125 A (*)
10/1000 µs
1 kV
10/1000 µs
40 A (*)
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
!"
DUAL ASYMETRICAL
TRANSIENT SUPPRESSOR
!"
PEAK PULSE CURRENT:
I
PP
=40A,10/1000µs
!"
HOLDING CURRENT:50mA
min.
!"
BREAKDOWN VOLTAGE:
TCP009A: 9 V
LOW DYNAMIC
CHARACTERISTICS
!"
STAND CCITT K20 AND
LSSGR
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS
!"
T
T
C
C
P
P
0
0
0
0
9
9
A
A
UL94V-0 TCPxx packages comply with requirements of UL94V-0
Microsemi
Santa Ana Division
2830 S. Fairview Street, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
Copyright 2000
MSC1635.PDF 2000-12-01
WWW.
Microsemi
.
COM
TCP009A
DUAL ASYMETRICAL TRANSIENT
SUPPRESSOR FOR XDSL AND DATA LINES
PRODUCT PREVIEW
waveform:
Note 1 : Pulse waveform :
Note 1: Pulse wave
10/1000 µs tr = 10 µs tp = 1000 µs
5/310 µs tr = 5µs tp = 310 µs
2/10 µs tr = 2µs tp = 10 µs
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Value Unit
I
PP
Peak pulse current (see note 1)
10/1000
µ
s
5/310
µ
s
2/10
µ
s
40
50
125
A
I
TSM
Non repetitive surge peak on-state current F =
50 Hz
t = 300 ms
t = 1 s
t = 5 s
10
50
1
A
I
TSM
F=50Hz, 60x1s, 2mn between pulse 1 A
T
stg
T
j
Storage temperature range
Maximum junction temperature
-55 to + 150
150
°
C
T
L
Maximum lead temperature for soldering during 10s 260
°
C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th
(j-a)
Junction to ambient 170
°
C/W
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
Symbol Parameter
V
RM
Stand-off voltage
I
RM
Leakage current at stand-offvoltage
V
BR
Breakdown voltage
V
BO
Breakover voltage
I
H
Holding current
VF
Forward voltage drop
VFP
Peak forward voltage
I
BO
Breakover current
I
PP
Peak pulse current
C
Capacitance
α
T
Temperature coefficient
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
Microsemi
Santa Ana Division
2830 S. Fairview Street, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page
3
Copyright 2000
MSC1635.PDF 2000-12-01
WWW.
Microsemi
.
COM
TCP009A
DUAL ASYMETRICAL TRANSIENT
SUPPRESSOR FOR XDSL AND DATA LINES
PRODUCT PREVIEW
1 - PARAMETERS RELATED TO DIODE LINE / GND
Symbol Test Conditions Min Typ Max Unit
V
F
I
F
=1A tp=100
µs
2 V
2 – PARAMETERS RELATED TO PROTECTION THYRISTOR
I
RM @ VRM
max
I
R @ VBR
min
V
BO
max
I
BO
min max
I
H
min
C
max
Types
µ
A
V mA V V V mA mA pF
TCP009A
10 8 1 9 12 50 400 50 30
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
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