Microsemi Corporation SM2337 Datasheet
SM2337
SSSS
1200 VOLT
ULTRA FAST RECOVERY RECTIFIER
PRODUCT PREVIEW
High Voltage, Low Leakage, Ultra Fast Rectifier
IMPORTANT:
DESCRIPTION
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
•
Available in axial leaded
package
•
Ultra Fast Recovery Time
•
High Voltage
•
Metallurgical bonding
•
Voidless hermetically sealed
glass package
•
TX, TXV and space level
screening available Per
Internal Process
Specification and
SM2337TX, SM2337TXV per
PS7.00 SP2337US per
PS15.85
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
•
TWT design
•
Reverse Recovery less than
20 nano seconds.
•
less than 20pf
C
j
•
Low VF
•
60 Amp Surge
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Microsemi
.
COM
Description Symbol Min. Max. Unit
Minimum Breakdown Voltage
Working Peak Voltage
Surge Current
Average Operating Current
Thermal Resistance
Thermal Impedance
Storage and Junction Temperature Range
MAXIMUM RATINGS @ 25°C (unless otherwise specified)
V
BR
V
rwm
I
FSM
I
O
R
θjc
Z
θjx
T
,
stg
1300 Volts
T
j
1200 Volts
60 Amps
2 Amps
10
1.2
-65 to +175
°
C/W
°
C/W
°
C
S
S
M
M
2
2
3
3
3
3
7
7
Copyright 2000
MSC1595.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
SM2337
Description Symbol Conditions Min Max Unit
Reverse (Leakage)
Reverse (Leakage)
Forward Voltage
Forward Voltage
Breakdown Voltage
Forward Voltage
Breakdown Voltage
Reverse Recovery Time
Thermal Impedance
Thermal Resistance
Forward Surge
Capacitance
1200 VOLT
ULTRA FAST RECOVERY RECTIFIER
PRODUCT PREVIEW
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
I
R
I
R
V
V
V
V
V
BR2
t
Z
R
θ
I
FSM
C
F1
F2
BR
F2
rr
θjx
je
1
V
= 1200 Vdc,
R
V
2
c
j
= 1200 V,
R
I
= 1.0A
F
I
= 2.0A,
F
I
= 50µA,
BR
I
= 1.0A,
F
I
= 50µA,
BR
I
= 0.5A,
F
I
= 10mA,
M
I
= 5A(min),
H
I
= 10mA,
M
I
= 2A(min),
H
8.3mSec pulse, Half Sine Wave
Superimposed on Io, 1 Pulse per minute
V
= 10V, f = 1Mhz,
R
T
= 25°C
A
T
= 100°C
A
T
= 25°C, tp = 10mSec.
A
T
= 25°C, tp = 10mSec.
A
T
= 25°C
A
T
= -55°C
A
T
= -55°C
A
I
= 1.0A,
R
T
T
I
(REC) = 0.25A
rm
= 100µSec.(max),
md
T
= 10mSec.
H
= 100µSec.(max),
md
T
= Thermal Equilibrium
H
V
sig
= 50mV (p-p)
2.0
75
2.5 Volts
3.0 Volts
1300 Volts
3.0 Volts
1200 Volts
20 nsec.
1.2
10
60 Amps
20 pf
µ
µ
°
C/W
°
C/W
A
A
WWW.
Microsemi
.
COM
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
Copyright 2000
MSC1595.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
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