Microsemi Corporation SD1224 Datasheet

3. Base
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTION
DESCRIPTIONDESCRIPTION
RF & MICROWAVE TRANSISTORS
The SD1224 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground station transmitters. This device utilizes ballasted emitter resistors and improved metallization systems to achieve optimum load mismatch capability
.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
C)
°°°°
Symbol Parameter Value Unit
V V V
P
T
ABSOLUTE MAXIMUM RATINGS (T
Collector-Base Voltage 65 V
CBO
Collector-Emitter Voltage 35 V
CEO
Emitter-Base Voltage 4.0 V
EBO
I
C
DISS
T
STG
J
Device Current 5.0 A Power Dissipation 60 W Junction Temperature +200 Storage Temperature -65 to +150
CASE
= 25
R
TH(j-c)
Junction-Case Thermal Resistance 2.9
THERMAL DATA
°C °C
°C/W
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
! 175 MHz ! 28 Volts ! Class C ! Common Emitter ! Efficiency 60% Min. ! P
= 40 W Min.
OUT
! GP = 7.6 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
! VHF FM Applications
.380 4LSTUD (M135)
epoxy sealed
PIN CONNECTION
4
1. Collector
2. Emitter
1
3
SD1224
2
4. Emitter
WWW.
Microsemi
.COM
S
S
D
D
1
1
2
2
2
2
4
4
Copyright 2000 MSC1643.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
RF PRODUCTS DIVISION
Symbol Test Conditions
BV
BV BV BV
I
I
CES
CBO
h
CBO CES CEO EBO
FE
V
V
Symbol Test Conditions
P
G
ηC
C
OUT
P
OB
Test Conditions: V
P
(W)
IN
2.0 28.5 0.85 + j 1.20 3.25 + j 7.05
4.0 43.0 1.05 + j 1.32 4.45 + j 5.40
6.0 53.0 1.01 + j 1.42 5.25 + 4.42
8.0 60.5 1.05 + j 1.35 5.45 + j 4.12
Copyright 2000 MSC1643.PDF 2000-12-20
STATIC ELECTRICAL SPECIFICATIONS (T
RF & MICROWAVE TRANSISTORS
°°°°
= 25
CASE
SD1224
Min. Typ. Max.
I I I I
V
=
C
=
C
=
C
=
E
CE CB CE
10 mA 200 mA 200 mA 10 mA
= = =
30 V 30 V 5 V
DYMANIC ELECTRICAL SPECIFICATIONS (T
I V I I I I I
=
B
BE
=
B
=
C
=
E
=
E
=
C
0 mA
=
0 V 0 mA 0 mA 0 mA 0 mA 500 mA
65 V 65 V 35 V
4.0 V 10 mA 1 mA
5 200
= 25
CASE
SD1224
Min. Typ. Max.
=
f
175 MHz
=
f
175 MHz
=
f
175 MHz
=
f
1 MHz
= 28 V
CE
175 MHz
=
f
=
P
7.0 W V
IN
=
P
7.0 W V
IN
=
P
7.0 W V
IN
V
30 V
=
CB
P
OUT
IMPEDANCE DATA
(w)
CE CE CE
= = =
28 V 28 V 28 V
Z
40 W
7.6 dB
60 %
65 pF
IN (Ω)
Z
Microsemi
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
RF Products Division
C)
°°°°
C)
CL (Ω)
SD1224
Units
Units
Page 2
WWW.
Microsemi
.COM
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
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