Microsemi Corporation SD1127 Datasheet
Symbol
Parameter
Value
Unit
ºC
ºC
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
VHF COMMUNICATIONS
Features
• • DESIGNED FOR VHF MILITARY AND COMMERCIAL
EQUIPMENT
• • 4.0 WATTS (MIN) WITH GREATER THAN 10 dB GAIN
• • GROUNDED EMITTER CONFIGURATION
SD1127
DESCRIPTION:DESCRIPTION:
THE SD1127 IS A 12.5 VOLT SILICON NPN PLANAR TRANSISTOR DESIGNED FOR
ECONOMICAL VHF COMMUNICATIONS. THE TRANSISTOR CHIP IS MOUNTED ON A
BERYLLIUM OXIDE TAB TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED
EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT HEAT DISSIPATION.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25ºC)
P
DISS
V
CBO
V
CEO
I
C
T
STG
T
J
*At RF Conditions
Total Power Dissipation * 8.0 W
Collector-base Voltage 36 V
Collector-emitter Voltage (IB=0) 18 V
Collector Current * 0.64 A
Storage Temperature -65 to 200
Junction Temperature 200
Thermal DataThermal Data
R
TH(J-C)
Thermal Resistance Junction-case 21.9
°°C/W
MSC0936.PDF 10-15-98
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
STATICSTATIC
Bvceo IC = 10 mA 18 --- --- V
Bvces IC = 5 mA 36 --- --- V
Bvebo IE = 1 mA 4.0 --- --- V
Cob VCB=15V --- --- 0.25 mA
HFE IC = 50 mA VCE=5V 5.0 --- --- ---
DYNAMICDYNAMIC
SD1127
P
out
G
P
Cob f=1 MHz VCE=15V IE= 0 mA --- --- 20 pF
f=175 MHz VCE=12.5V 4.0 --- --- W
f=175 MHz VCE=12.5V 10 12 --- dB
IMPEDANCE DATAIMPEDANCE DATA
FREQ
175 MHz 4.1- j 5.6 13.5- j 20.0
PIN=0.2W VCE=12.5V
ZIN(Ω)Ω) ZCL(Ω)Ω)
MSC0936.PDF 10-15-98
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