Microsemi Corporation SD1070 Datasheet
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTION
This silicon epitaxial NPN planar high frequency transistor employs a
multi emitter electrode design. This feature together with a heavily diffused
base matrix located between the indiv idua l em itters re s u lts in hig h RF
current handling capability, high power gain, low base resistance and low
output capacitance. These transistors are intended for Class A, B, or C
amplifier, oscillator or frequency multiplier circuits and are specifically
designed for operation in the VHF-UHF region.
DESCRIPTIONDESCRIPTION
RF & MICROWAVE TRANSISTORS
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
C)
°°°°
Symbol Parameter Value Unit
V
V
V
P
T
ABSOLUTE MAXIMUM RATINGS (T
Collector-Base Voltage 65 V
CBO
Collector-Emitter Voltage 40 V
CES
Emitter-Base Voltage 4.0 V
EBO
I
C
DISS
T
STG
J
Device Current 3.0 A
Power Dissipation 23.0 W
Junction Temperature +200
Storage Temperature -65 to +150
CASE
= 25
R
TH(j-c)
Junction-Case Thermal Resistance 7.6
THERMAL DATA
Copyright 2000
MSC1642.PDF 2000-12-20
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Microsemi
RF Products Division
°C
°C
°C/W
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
! 130 - 400 MHz
! 28 Volts
! High Power Gain
! High Efficiency
! Common Emitter
! P
= 13.5 W Min. @
OUT
175 MHz
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
! VHF - UHF Applications
PIN CONNECTION
1. Emitter
2. Base
2
1
3. Collector
SD1070
3
Page 1
WWW.
Microsemi
.COM
S
S
D
D
1
1
0
0
7
7
0
0
SD1070
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
WWW.
STATIC ELECTRICAL SPECIFICATIONS (T
Symbol Test Conditions
BV
BV
BV
I
CEO
h
CBO
EBO
CEO
FE
V
I
I
I
V
=
C
=
E
=
C
=
CE
=
CE
0.5 mA
0.25 mA
200 mA
30 V
5 V
=
1 A
I
C
°°°°
= 25
CASE
Min. Typ. Max.
C)
SD1070
Units
65 V
4 V
40 V
0.25 mA
5
Microsemi
.COM
DYMANIC ELECTRICAL SPECIFICATIONS (T
Symbol Test Conditions
P
ηηηηC
G
C
OUT
P
OB
=
f
175 MHz
=
f
175 MHz
=
f
175 MHz
=
f
1 MHz
=
P
3.5 V V
IN
=
P
3.5 V V
IN
=
P
3.5 V V
IN
=
V
30 V
CB
CC
CC
CC
=
28 V
=
=
28 V
28 V
CASE
Min. Typ. Max.
13.5 W
70 %
5.8 dB
20 pF
= 25
°°°°
C)
SD1070
Units
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
Copyright 2000
MSC1642.PDF 2000-12-20
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 2
Loading...