Microsemi Corporation SD1014-02 Datasheet
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTION
DESCRIPTIONDESCRIPTION
RF & MICROWAVE TRANSISTORS
The SD1014-02 is an epitaxial silicon NPN planar transistor
designed primarily for VHF mobile and marine transmitters. The
device utilizes emitter ballasting resistors and improved metallization
systems to achieve extreme ruggedness under severe operating
conditions.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
C)
Symbol Parameter Value Unit
V
V
V
P
T
ABSOLUTE MAXIMUM RATINGS (T
Collector-Base Voltage 36 V
CBO
Collector-Emitter Voltage 18 V
CEO
Emitter-Base Voltage 4.0 V
EBO
I
C
DISS
T
STG
J
Device Current 2.5 A
Power Dissipation 31 W
Junction Temperature +200
Storage Temperature -65 to +150
CASE
= 25
°°°°
WWW.
Microsemi
.
COM
P
RODUCT PREVIEW
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
175 MHz
!"
12.5 Volts
!"
Common Emitter
!"
P
!"
OUT
G
!"
P
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
VHF FM Mobile
!"
Applications
SD1014-02
= 15 W Min.
= 6.3 dB Gain
°C
°C
R
TH(j-c)
Junction-Case Thermal Resistance 5.6
Copyright 2000
MSC1629.PDF 2000-11-28
THERMAL DATA
°C/W
Microsemi
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
RF Products Division
Page 1
S
S
D
D
1
1
0
0
1
1
4
4
-
-
0
0
2
2
SD1014-02
RF PRODUCTS DIVISION
RF & MICROWAVE TRANSISTORS
P
RODUCT PREVIEW
WWW.
STATIC ELECTRICAL SPECIFICATIONS (T
Symbol Test Conditions
BV
BV
BV
I
h
CBO
FE
CES
CEO
EBO
I
10 mA
I
I
V
V
C
C
E
=
20 mA
=
2 mA
=
=
CB
=
CE
15 V
5 V
V
I
I
I
I
BE
=
B
=
C
=
E
=
C
0 V
=
0 mA
0 mA
0 mA
500 mA
CASE
Min. Typ. Max.
36 V
18 V
4.0 V
5 200
°°°°
= 25
C)
SD1014-02
Units
0.5 mA
Microsemi
.
COM
DYMANIC ELECTRICAL SPECIFICATIONS (T
Symbol Test Conditions
P
OUT
G
P
ηηηη
C
C
OB
f
175 MHz
=
f
175 MHz
=
f
175 MHz
=
f
1 MHz
=
P
P
P
V
IN
IN
OUT
CB
=
=
3.5 W
3.5 W
3.5 W
=
15 V
=
12.5 V
V
=
CE
12.5 V
V
=
CE
12.5 V
V
=
CE
CASE
Min. Typ. Max.
15 W
6.3 dB
60 %
85 pF
°°°°
= 25
C)
SD1014-02
Units
P
V
.
= 3.0 W
IN
= 12.5 V
CC
P
IN (W)
P
5 27.6 1.0 – j 1.4 3.3 + j 1.2
IMPEDANCE DATA
OUT (W)
Z
Z
IN (Ω)
OUT (Ω)
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
Copyright 2000
MSC1629.PDF 2000-11-28
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 2
Loading...