Microsemi Corporation PPNGZ52F120A, PPNHZ52F120A Datasheet
PPC INC.
7516 Central Industrial Drive
Riviera Beach, FL 33404
PH: 561-842-0305
Fax: 561-845-7813
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: PPNH(G)Z52F120B
• high frequency IGBT, low switching losses
• anti-parallel FREDiode (PPNHZ52F120A only)
PPNGZ52F120A
PPNHZ52F120A
1200 Volts
52 Amps
3.2 Volts vce(sat)
N-CHANNEL
INSULATED GATE BIPOLAR
TRANSISTOR
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL MAX. UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ T
≥ 25°C, RGS= 1 MΩ BV
J
Continuous Gate-to-Emitter Voltage V
Transient Gate-to-Emitter Voltage V
Continuous Collector Current Tj= 25°C
Tj= 90°C
Peak Collector Current (pulse width limited by T
Tj= 90°C
Avalanche energy (single pulse) @ I
RG= 25Ω, Tj= 25°C
Short circuit current (SOA) , V
CE
Short circuit (reverse) current (RBSOA) , V
= 25A, VCC= 50V, L= 200µH,
C
≤ 1200V, TJ= 150°C, tsc≤ 10µs I
CE
,) Tj= 25°C
jmax
≤ 1200V, TJ= 150°C I
Power Dissipation P
Junction Temperature Range T
Storage Temperature Range T
Continuous Source Current (Body Diode, PPNHZ52F120A only) I
Pulse Source Current (Body Diode, PPNHZ52F120A only) I
Thermal Resistance, Junction to Case
BV
CES
CGR
GES
GEM
I
C25
I
C90
I
CM(25)
I
CM(90)
E
AS
C(sc)
C(sc)RBSOA
D
j
stg
S
SM
θ
JC
1200 Volts
1200 Volts
+/-20 Volts
+/-30 Volts
52
33
104
66
65 mJ
260 A
66 A
300 Watts
-55 to +150
-55 to +150
50 Amps
100 Amps
0.42
Amps
Amps
°C
°C
°C/W
Datasheet# MSC1376.PDF
PPC INC.
PPNGZ52F120A
PPNHZ52F120A
Electrical Parameters @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage V
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current) I
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1) g
BV
V
CES
GE(th)
I
GES
CES
CE(sat)
fs
VGS = 0 V, IC = 250 µA
VCE = VGE, IC = 350 µA
VGE = ± 20VDC, VCE = 0 TJ = 25°C
TJ = 125°C
VCE =0.8•BV
= 0 V TJ = 125°C
VGE
CES TJ
= 25°C
VGE= 15V, IC= 25A TJ = 25°C
IC= 25A TJ = 125°C
IC= 60A TJ = 25°C
IC= 30A TJ = 125°C
1200 V
4.5 5.5 6.5 V
±100
±200
250
1000
2.7
3.3
3.2
3.9
3.4
4.3
VCE = 20 V; IC = 25 A 8.5 20 S
nA
µA
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ies
C
oes
C
res
V
= 0 V, VCE = 25 V, f = 1 MHz 1650
GE
INDUCTIVE LOAD, Tj= 125°°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
t
d(on)
t
E
t
d(off)
t
Eoff
ri
on
fi
VGE = 15 V, VCE = 600 V,
IC = 25 A, RG = 47 Ω,
L= 100 µH note 2, 3
INDUCTIVE LOAD, Tj= 125°°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (PPNHZ52F120A
only)
Antiparallel diode reverse recovery time
(PPNHZ52F120A only)
Antiparallel diode reverse recovery charge
(PPNHZ52F120A only)
Antiparallel diode peak recovery current
(PPNHZ52F120A only)
t
d(on)
t
E
t
d(off)
t
Eoff
Q
Q
Q
V
t
Q
I
RM
ri
on
fi
g
ge
gc
F
rr
rr
VGE = 15 V, VCE = 600 V,
IC = 50 A, RG = 47 Ω,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 600V, IC = 25A 160
IE= 10 A TJ = 25 °C
IE= 10 A TJ = 100 °C
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C
Notes
(1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2%
(2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
250
110
75
65
3.6
420
45
2.4
95
90
10
420
45
4.2
20
75
2.4
2
60
800
22
2200
pF
380
160
110
100
mJ
560
60
mJ
mJ
mJ
nC
3 V
TBD ns
TBD nC
nC
TBD A
ns
ns
ns
ns
ns
ns
ns
ns
V
ns
A
Datasheet# MSC1376.PDF
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