Microsemi Corporation MSASC150H45A Datasheet

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSASC150H45A
Features
Platinum/Tungsten schottky barrier for low forward voltage drop
Oxide passivated structure for very low leakage currents
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
45 Volts
150 Amps
Low package inductance
Very low thermal resistance
TXV-level (MSASC150H45AV) or S-level (MSASC150H45AS)
screening i.a.w. Microsemi Internal Procedure PS 11.50 available
LOW VOLTAGE
DROP SCHOTTKY
DIODE
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage V Working Peak Reverse Voltage V DC Blocking Voltage V Average Rectified Forward Current, Tc 135°C derating, forward current, Tc 135°C
dIF/dT (3.75) Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz Junction Temperature Range T Storage Temperature Range T Thermal Resistance, Junction to Case
Mechanical Outline
RRM
RWM
I
F(ave)
FSM
I
RRM
θ
stg JC
45 Volts 45 Volts
R
45 Volts
150 Amps
Amps/°C
500 Amps
2 Amp
j
-65 to +175
-65 to +175
0.25
°C °C
°C/W
Datasheet# MSC0876.PDF
MSASC150H50A
Electrical Parameters
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Reverse (Leakage) IR
Current IR Forward Voltage VF1
pulse test, VF2
pw= 300 µs
d/c 2%
Junction Capacitance Cj1 VR= 10 Vdc 4500 4900 pF
Breakdown Voltage BVR
25
IR
100 125
VF3 VF4 VF5 VF6 VF7 VF8 VF9
VF10
Cj2 VR= 5 Vdc 6400 pF
VR= 45 Vdc, Tc= 25°C VR= 45 Vdc, Tc= 100°C VR= 45 Vdc, Tc= 125°C IF= 20A, Tc= 25°C IF= 50A, Tc= 25°C IF= 100A, Tc= 25°C IF= 150A, Tc= 25°C IF= 50A, Tc= -55°C IF= 50A, Tc= 125°C IF= 100A, Tc= 125°C IF= 10 mA, Tc= 25°C IF= 50 mA, Tc= 25°C IF= 100 mA, Tc= 25°C
IR= 5 mA, Tc= 25°C IR= 5 mA, Tc= -55°C
45 55 V 45 50 V
1 10 mA 125 400 500 mA 400 450 mV 500 565 mV 650 730 mV 770 900 mV 580 670 mV 420 500 mV 590 - mV 135 mV 175 mV 195 mV
Datasheet# MSC0876.PDF
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