2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSASC100W45H
MSASC100W45HR
Or
Features
1N6791
• Tungsten schottky barrier
• Oxide passivated structure for very low leakage currents
45 Volts
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
100 Amps
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, MSASC100W45H) and
SURFACE MOUNT
LOW LEAKAGE
reverse polarity (strap-to-cathode: MSASC100W45HR)
SCHOTTKY DIODE
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage V
Working Peak Reverse Voltage V
RWM
DC Blocking Voltage V
Average Rectified Forward Current, Tc≤ 145°C
derating, forward current, Tc≥ 145°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
I
F(ave)
dIF/dT 3.3
FSM
I
RRM
Junction Temperature Range T
Storage Temperature Range T
Thermal Resistance, Junction to Case: MSASC100W45H
θ
MSASC100W45HR
RRM
R
j
stg
JC
45 Volts
45 Volts
45 Volts
100 Amps
500 Amps
2 Amp
-65 to +175
-65 to +175
0.35
0.5
Amps/°C
°C
°C
°C/W
Mechanical
MSASC100W45H
MSASC100W45HR
Electrical Parameters
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Reverse (Leakage) IR
Current IR
25
125
Forward Voltage VF1 IF= 10A, Tc= 25°C 500 550 mV
pulse test, VF2 IF= 20A, Tc= 25°C 560 600 mV
pw= 300 µs VF3 IF= 40A, Tc= 25°C 610 675 mV
d/c≤ 2% VF4 IF= 80A, Tc= 25°C 740 800 mV
VF5 IF= 100A, Tc= 25°C 800 mV
VF6 IF= 20A, Tc= -55°C 650 700 mV
VF7 IF= 20A, Tc= 125°C 450 mV
Junction Capacitance Cj1 VR= 10 Vdc 2500 3000 pF
Cj2 VR= 5 Vdc 3500 pF
Breakdown Voltage BVR IR= 5 mA, Tc= 25°C 55 V
VR= 45 Vdc, Tc= 25°C .01 1 mA
VR= 45 Vdc, Tc= 125°C 10 100 mA
IR= 5 mA, Tc= -55°C 45 50 V
120
100
80
60
IF (A)
40
20
VF vs IF Typical Curves
25 C
100 C
125 C
0
400 450 500 550 600 650 700 750 800 850 900
VF (mV)