Microsemi Corporation MSASC100W100H, MSASC100W100HR Datasheet
Datasheet# MSC0306A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSASC100W100H
MSASC100W100HR
Features
• Tungsten schottky barrier
• Oxide passivated structure for very low leakage currents
• Guard ring protection for increased reverse energy capability
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface mount power package
• Low package inductance
• Very low thermal resistance
• Available as standard polarity (strap-to-anode, MSASC100W100H)
and reverse polarity (strap-to-cathode: MSASC100W100HR)
100 Volts
100 Amps
LOW LEAKAGE
SCHOTTKY DIODE
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage V
Working Peak Reverse Voltage V
DC Blocking Voltage V
Average Rectified Forward Current, Tc≤ 135°C
derating, forward current, Tc≥ 135°C
I
F(ave)
dIF/dT 2.5
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I
Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz
I
RRM
Junction Temperature Range T
Storage Temperature Range T
Thermal Resistance, Junction to Case:
θ
MSASC100W100H
Mechanical Outline
RRM
RWM
R
FSM
j
stg
JC
100 Volts
100 Volts
100 Volts
100 Amps
500 Amps
2 Amp
-65 to +175
-65 to +175
0.35
0.5
Amps/°C
°C
°C
°C/W
MSASC100W100H
Datasheet# MSC0306A
MSASC100W100HR
Electrical Parameters
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Reverse (Leakage) IR
Current IR
Forward Voltage VF1
pulse test, VF2
pw= 300 µs
d/c≤ 2%
Junction Capacitance Cj1 VR= 10 Vdc 1500 2000 pF
Breakdown Voltage BVR
25
125
VF3
VF4
VF5
VF6
VF7
Cj2 VR= 5 Vdc tbd pF
VR= 100 Vdc, Tc= 25°C
VR= 100 Vdc, Tc= 125°C
IF= 10A, Tc= 25°C
IF= 20A, Tc= 25°C
IF= 40A, Tc= 25°C
IF= 80A, Tc= 25°C
IF= 100A, Tc= 25°C
IF= 20A, Tc= -55°C
IF= 20A, Tc= 125°C
IR= 1 mA, Tc= 25°C
IR= 1 mA, Tc= -55°C
100 110 V
.05 1 mA
10 100 mA
570 620 mV
670 720 mV
760 820 mV
890 950 mV
940 mV
710 800 mV
540 mV
120 V
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