Microsemi Corporation MSARW80G20A Datasheet
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
Features
• Oxide passivated structure for very low leakage currents
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, low profile ceramic surface m ount power pack age
• Low package inductance
•
Very low thermal resistance
•
available with TXV (MSARW80G20AV) or S-level (MSARW80G20AS)
screening i.a.w. Microsemi internal procedure PS11.50
MSARW80G20A
(MX028)
200 Volts
80 Amps
37 ns
ULTRAFAST
RECTIFIER
Maximum Ratings @ 25
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage V
Working Peak Reverse Voltage V
DC Blocking Voltage V
Average Rectified Forward Current, Tc≤ 135°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I
Junction Temperature Range T
Storage Temperature Range T
Thermal Resistance, Junction to Case
°°°°
C (unless otherwise specified)
RRM
RWM
I
F(ave)
FSM
θ
stg
JC
200 Volts
200 Volts
R
j
200 Volts
80 Amps
250 Amps
-65 to +200
-65 to +200
0.8
(typ.0.35)
°C/W
Mechanical Outline
°C
°C
Datasheet# MSC1459.pdf rev1 June, 2000
MSARW80G20A
(MX028)
Electrical Parameters
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Reverse (Leakage) IR
Current IR
100
Forward Voltage VF1
pulse test, VF2
pw= 300 µs
d/c≤ 2%
VF3
VF4
VF5
VF6
25
VR= 200 Vdc, Tc= 25°C
VR= 200 Vdc, Tc= 100°C
IF= 5 A, Tc= 25°C
IF= 25 A, Tc= 25°C
IF= 50 A, Tc= 25°C
IF= 80 A, Tc= 25°C
IF= 50 A, Tc= -55°C
IF= 50 A, Tc= 100°C
Junction Capacitance Cj1 VR= 10 Vdc 500 pF
Reverse Recovery
Time
Reverse Recovery
Current
Breakdown Voltage BVR
trr IF= 9.9A, dIF/dt=
200A/µs, Vr= 30V
I
RM(rec)
IF= 9.9A, dIF/dt=
200A/µs, Vr= 30V
IR= 250 µA, Tc= 25°C
200 V
- 250
-10mA
720 750 mV
860 900 mV
950 1050 mV
1050 mV
1150 mV
830 mV
35 37 ns
55.5A
µ
A
0.950
0.900
0.850
0.800
0.750
0.700
VF (V)
0.650
0.600
0.550
0.500
MSARW80G20A
typ VF vs IF vs TC
TC=0C
TC=25C
TC=80C
0 5 10 15 20 25 30 35 40
IF (A)
Datasheet# MSC1459.pdf rev1 June, 2000
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