Microsemi Corporation MSAHX60F60A, MSAGX60F60A Datasheet
Thermal Resistance, Junction to Case
θ
0.4
°C/W
2830 S. Fairview St.
GATE (MS…B)
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAGX60F60A
MSAHX60F60A
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: MSAH(G)60F60B
• high frequency IGBT, low switching losses
• anti-parallel FREDiode (MSAHX60F60A only)
2.9 Volts vce(sat)
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL MAX. UNIT
600 Volts
60 Amps
N-CHANNEL
INSULATED GATE
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ T
≥ 25°C, RGS= 1 MΩ BV
J
BV
Continuous Gate-to-Emitter Voltage V
Transient Gate-to-Emitter Voltage V
Continuous Collector Current Tj= 25°C
Tj=
90°C
Peak Collector Current, pulse width limited by T
Safe Operating Area (RBSOA) @ V
load), RG= 4.7Ω, Tj= 125°C, VCE= 0.8 x V
= 15V, L= 100µH (clamped inductive
GE
CES
, I
jmax
I
I
I
Power Dissipation P
Junction Temperature Range T
Storage Temperature Range T
Continuous Source Current (Body Diode, MSAHX60F60A only) I
Pulse Source Current (Body Diode, MSAHX60F60A only) I
Mechanical Outline
CES
CGR
GES
GEM
C25
C90
CM
max
stg
S
SM
600 Volts
600 Volts
+/-20 Volts
+/-30 Volts
60
Amps
32
120 Amps
64 Amps
D
j
300 Watts
-55 to +150
-55 to +150
°C
°C
32 Amps
100 Amps
COLLECTOR
Datasheet# MSC0298A
EMITTER
(MS…A)
.A)
EMITTER (MS…B)
MSAGX60F60A
MSAHX60F60A
Electrical Parameters @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage V
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current) I
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1) g
BV
V
CES
GE(th)
I
GES
CES
CE(sat)
fs
VGS = 0 V, IC = 250 µA
VCE = VGE, IC = 250 µA
VGE = ± 20VDC, VCE = 0 TJ = 25°C
TJ = 125°C
VCE =0.8•BV
VGE
CES TJ
= 0 V TJ = 125°C
= 25°C
VGE= 15V, IC= 30A TJ = 25°C
IC= 60A TJ = 25°C
IC= 30A TJ = 125°C
VCE ≥ 10 V; IC = 30 A
600 V
2.5 5.0 V
±100
±200
200
1000
2.2
2.9 V
3.5
2.2
15 20 S
nA
µA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 25°°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125°°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (MSAHX60F60A
only)
Antiparallel diode reverse recovery time
(MSAHX60F60A only)
Antiparallel diode reverse recovery charge
(MSAHX60F60A only)
Antiparallel diode peak recovery current
(MSAHX60F60A only)
C
C
C
t
d(on)
t
d(off)
Eoff
t
d(on)
E
t
d(off)
Eoff
Q
Q
Q
V
Q
I
V
ies
oes
res
t
ri
t
fi
= 0 V, VCE = 25 V, f = 1 MHz 2500
GE
VGE = 15 V, VCE = 480 V,
IC = 30 A, RG = 4.7 Ω,
L= 100 µH note 2, 3
230
70
25
30
175
125
175
1.3
t
ri
on
IC = 30 A, RG = 4.7 Ω,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 480 V,
25
35
1
250
t
fi
260
4
g
ge
gc
F
VGE = 15 V, VCE = 300V, IC = 30A 125
23
50
IE= 15 A TJ = 25 °C
IE= 15 A TJ = 150 °C
IE= 30 A TJ = 25 °C
IE= 50 A TJ = 25 °C
t
rr
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C
rr
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C
RM
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C
1.7
1.9
140
160
320
3
4.2
150
35
75
1.5
1.3
100 ns
pF
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
nC
V
V
V
V
ns
nC
nC
A
A
Notes
(1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2%
(2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
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