Microsemi Corporation MSAGX75F60A Datasheet
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAGX75F60A
Features
• Rugged polysilicon gate cell structure
• high current handling capability, latch-proof
• Hermetically sealed, surface mount power package
2.7 Volts vce(sat)
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request: MSAGX75F60B
• high frequency IGBT, low switching losses
BIPOLAR TRANSISTOR
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL MAX. UNIT
600 Volts
75 Amps
N-CHANNEL
INSULATED GATE
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ ≥ 25°C
Collector-to-Gate Breakdown Voltage @ T
≥ 25°C, RGS= 1 MΩ BV
J
BV
Continuous Gate-to-Emitter Voltage V
Transient Gate-to-Emitter Voltage V
Continuous Collector Current Tj= 25°C
Tj=
90°C
Peak Collector Current, pulse width limited by T
Safe Operating Area (RBSOA) @ V
load), RG= 2.7Ω, Tj= 125°C, VCE= 0.8 x V
= 15V, L= 30µH (clamped inductive
GE
CES
, I
jmax
I
I
I
Power Dissipation P
Junction Temperature Range T
Storage Temperature Range T
Thermal Resistance, Junction to Case
θ
Mechanical Outline
CES
CGR
GES
GEM
C25
C90
CM
max
stg
JC
600 Volts
600 Volts
+/-20 Volts
+/-30 Volts
75
Amps
50
200 Amps
100 Amps
D
j
300 Watts
-55 to +150
-55 to +150
0.25
COLLECTOR
°C
°C
°C/W
Datasheet# MSC0272B
EMITTER
GATE
MSAGX75F60A
Electrical Parameters @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage V
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current) I
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1) g
BV
V
CES
GE(th)
I
GES
CES
CE(sat)
fs
VGS = 0 V, IC = 250 µA
VCE = VGE, IC = 250 µA
VGE = ± 20VDC, VCE = 0 TJ = 25°C
TJ = 125°C
VCE =0.8•BV
VGE
CES TJ
= 0 V TJ = 125°C
= 25°C
VGE= 15V, IC= 50A TJ = 25°C
IC= 50A TJ = 125°C
VCE ≥ 10 V; IC = 50 A
600 V
2.5 5.0 V
±100
±200
200
1000
2.7 V
2.5
25 35 S
nA
µA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 25°°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125°°C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
C
C
C
t
d(on)
t
d(off)
Eoff
t
d(on)
E
t
d(off)
Eoff
Q
Q
Q
V
ies
oes
res
t
ri
t
fi
= 0 V, VCE = 25 V, f = 1 MHz 4000
GE
VGE = 15 V, VCE = 480 V,
IC = 50 A, RG = 2.7 Ω,
L= 100 µH note 2, 3
340
100
50
210
200
275
400
4.8
t
ri
on
IC = 50 A, RG = 2.7 Ω,
L= 100 µH note 2, 3
VGE = 15 V, VCE = 480 V,
50
240
3
280
t
fi
600
9.6
g
ge
gc
VGE = 15 V, VCE = 300V, IC = 50A 200
35
80
250
50
100
pF
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
nC
Notes
(1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2%
(2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
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