Microsemi Corporation MSAGA11F120D Datasheet

2830 S. Fairview Street

I

GES

Gate-Emitter Leakage Current (V

GE

= ±25V,

V

CE

=0V),

Tj= 37

°

C

Santa Ana, CA 92704
Phone: [phone]
Fax: [phone]

MSAGA11F120D

Fast IGBT Die for Implantable

Cardio Defibrillator

Applications

DESCRIPTION:

• N-Channel enhancement mode high density IGBT die

• Passivation: Polyimide, 20 um, over Silicon Nitride, .8um

• Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.

• Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach

55

FEATURES:

• Low Forward Voltage Drop, Low Tail Current

• Avalanche and Surge Rated

• High Freq. Switching to 20KHz

• Ultra Low Leakage Current

• RBSOA and SCSOA Rated

• Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix

10µs x 4ms double exponential

Surge Current (ICM) - Amps

10µs 4000µs

35-50% of

ICM Max

MAXIMUM RATINGS:

SYMBOL PARAMETER VALUE UNIT

V

CES

V

CGR

V

EG

V

GE

I

C1

I

C2

I

CM

I

CM1

I

CM2

I

Csurge2

Collector-Emitter Voltage 1200 Volts
Collector-Gate Voltage (RGE = 20KΩ)

1200 Volts
Emitter-Collector Voltage 15 Volts
Gate-Emitter Voltage ±20 Volts
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Surge Current (10µs x 4ms double exponential, see figure 2)
Pulsed Collector Current ¬ @ TC = 25°C
Pulsed Collector Current ¬ @ TC = 110°C
Surge Current: tp= 2 us (ton= 1.5 µs; toff= 0.5 µs to 50% decay), 10 pulses, duty

22 Amps
11 Amps
55 Amps
44 Amps
22 Amps

400 Apk

cycle= 1:2,500,000 (12 pulses/minute)

E

AS

P

D

T

J, TSTG

Single Pulse Avalanche Energy - 10 mJ
Total Power Dissipation 125 Watts
Operating and Storage: Junction Temperature Range -55 to 150

STATIC ELECTRICAL CHARACTERISTICS:

SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT
BV

CES

RBV

CES

VGE(TH) Gate Threshold Voltage (V

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Collector-Emitter Reverse Breakdown Voltage® (V
Gate Threshold Voltage (V

= VGE, IC = 350µA, T

CE

= VGE, IC = 350µA, T

CE

VCE (ON) Collector-Emitter On Voltage (V

Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V

I

CES

Collector Cut-off Current (V
Collector Cut-off Current (V
Collector Cut-off Current (V

= 80%V

CE

= 80%V

CE

= 80%V

CE

Gate-Emitter Leakage Current (V

= 15V, IC = I

GE

= 15V, IC = I

GE

= 15V, IC = I

GE

, VGE = 0V, TJ = 25°C)

CES

, VGE = 0V, TJ = 37°C)

CES

, VGE = 0V, TJ = 125°C)

CES

= ±25V, VCE =0V)

GE

= 20V, IC = 10mA)

GE

= 37°C

J

= 25°C

J

= 25°C)

C2, TJ

= 37°C)

C2, TJ

= 125°C)

C2, TJ

1200 Volts

-15 Volts

5.7 Volts

4.5 5.5 6.5 Volts

3.1 3.5 Volts

3.5 Volts
4 4.5 Volts

0.02 10 uA

0.07 uA
1000 uA

2 ±100 nA
4 nA

°C

MSC0947.PDF 2/5/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T

= 25°C unless otherwise specified

C

MSAGA11F120D

Fast IGBT Die for Implantable

Cardio Defibrillator

Applications

DYNAMIC CHARACTERISTICS:

SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNIT

C

ies

C

oes

C

ros

Input Capacitance
Output Capacitance

Reverse Transfer Capacitance f = 1 MHz 38 55 pF
Qg Total Gate Charge ¯
Qge Gate-Emitter Charge

Qgc Gate-Collector ("Miller") Charge

td (on)
t

r

td (off)
t

f

td (on)
t

r

td (off)
t

f

td (on)
t

r

td (off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-On Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-off Delay Time

Rise Time

Turn-off Delay Time

(tsv)

V

= 0V

GE

V

= 25V

CE

VGE = 15V

VCC = 0.5V

I

C

= I

CES

C2

Resistive Switching (25°C)

VGE = 15V, VCC = 0.5V

I

= I

C

C2

R

= 150Ω

e

CES

Inductive Switching (25°C)

V

R

(PEAK) = 0.5V

CLAMP

VGE = 15V, I

= 150Ω, TJ = +25°C

G

C

= I

C2

CES

Inductive Switching (125°C)

V

(PEAK) = 0.5V

CLAMP

VGE = 15V, I

C

= I

CES

C2

600 720 pF

60 120 pF

60 nC

4 nC

36 nC
35 ns

120 ns
580 ns

260 ns

55 110 ns
50 100 ns

380 570 ns

80 120 ns

40 ns
100 ns
550

ns

700

(tsi)

t

f

Fall Time
(tfv)

R

= 150Ω, TJ = +125°C

G

160

40

(tfi)

E

off

gfe Forward Transconductance

¬ Repetitive Rating: Pulse width limited by maximum junction temperature.

- IC = I
® TJ = 150°C
¯ See MIL-STD-750 Method 3471

= 50V, RCE = 25Ω, L = 300µH, TJ = 25°C

C2, VCC

Turn-off Switching Energy 1 mJ

V

=20V, IC = I

CE

C2

4.5 5 S

DIE PROBE PARAMETERS (100% TESTS):

SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT
BV

CES

RBV

CES

VGE(TH)
VCE (ON)

I

CES

I

GES

MSC0947.PDF 2/5/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA) 1200 1400 Volts
Collector-Emitter Reverse Breakdown Voltage ® (V
Gate Threshold Voltage (VCE = 6.5 V, IC = 350µA, TJ = 25°C
Collector-Emitter On Voltage (VGE = 12V, IC = 1 A, TJ = 25°C)

Collector Cut-off Current (VCE = 1200 V, VGE = 0V, TJ = 25°C)
Gate-Emitter Leakage Current (VGE = ±20 V, VCE =0V) 5 ±120 nA

= 15V, IC = 10mA) -15 30

GE

4.6 5.5 6.5

= 25°C unless otherwise specified

C

1.45 2.0

0.15 400 uA

ns