Microsemi Corporation MSAEZ30N20A, MSAFZ30N20A Datasheet

MSAEZ33N20A
MSAFZ33N20A

200 Volts

33 Amps

70 mΩΩ

Features

• Ultrafast rectifier in parallel with the body diode (MSAE type only)

• Rugged polysilicon gate cell structure

• Increased Unclamped Inductive Switching (UIS) capability

• Hermetically sealed, surface mount power package

• Low package inductance

• Very low thermal resistance

• Reverse polarity available upon request

DESCRIPTION SYMBOL MAX. UNIT

Drain-to-Source Breakdown Voltage (Gate Shorted to Source)

@ TJ ≥ 25°C

BV

DSS

200 Volts

Drain-to-Gate Breakdown Voltage @ T

J

≥ 25°C, RGS= 1 MΩ BV

DGR

200 Volts

Continuous Gate-to-Source Voltage V

GS

+/-20 Volts

Transient Gate-to-Source Voltage V

GSM

+/-30 Volts

Continuous Drain Current Tj= 25°C

Tj=
100°C

I

D25

I

D100

33
20

Amps

Peak Drain Current, pulse width limited by T

Jmax

I

DM

132 Amps

Repetitive Avalanche Current I

AR

33 Amps

Repetitive Avalanche Energy E

AR

16 mJ

Single Pulse Avalanche Energy E

AS

790 mJ

Voltage Rate of Change of the Recovery Diode
@ I

S

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

DSS

, TJ ≤ 150°C

dv/dt TBD V/ns

Power Dissipation P

D

300 Watts

Junction Temperature Range T

j

-55 to +150

°C

Storage Temperature Range T

stg

-55 to +150

°C

Continuous Source Current (Body Diode) I

S

33 Amps

Pulse Source Current (Body Diode) I

SM

132 Amps

Thermal Resistance, Junction to Case

θ

JC

0.4

°C/W

Maximum Ratings @ 25°°C (unless otherwise specified)

Mechanical Outline

Datasheet# MSC0300A

2830 S. Fairview St.
Santa Ana, CA 92704
PH: [phone]
FAX: [phone]

N-CHANNEL

ENHANCEMENT MODE

POWER MOSFET

DRAIN

SOURCE

GATE

DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT

Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)

BV

DSS

VGS = 0 V, ID = 250 µA

200 V

Temperature Coefficient of the Drain-to-Source
Breakdown Voltage

∆BV

DSS

/∆T

J

TBD

V/°C

Gate Threshold Voltage V

GS(th)

VDS = VGS, ID = 1 mA 2.0 3.0 4.0 V

Gate-to-Source Leakage Current

I

GSS

VGS = ± 20VDC, VDS = 0 TJ = 25°C
TJ = 125°C

±100
±200

nA

Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current) I

DSS

VDS =0.8•BV

DSS TJ

= 25°C

VGS

= 0 V TJ = 125°C

25

250

µA

Static Drain-to-Source On-State Resistance (1)

R

DS(on)

VGS= 10V, ID= 21A TJ = 25°C
ID= 33A TJ = 25°C
ID= 21A TJ = 125°C

0.06
TBD

0.11

0.07

Ω

Forward Transconductance (1) g

fs

VDS ≥ 15 V; ID = 21 A

15 23 S

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss

V

GS

= 0 V, VDS = 25 V, f = 1 MHz 2600

500
230

3900

750
350

pF

Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

T

d(on)

t

r

t

d(off)

t

f

VGS = 10 V, VDS = 30 V,

ID = 3 A, RG = 50 Ω

40
110
450
160

60
170
680
240

ns

Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge

Q

g(on)

Q

gs

Q

gd

VGS = 10 V, VDS = 160V, ID = 50A 120

10
70

nC

Body Diode Forward Voltage (1) V

SD

IF = IS, VGS = 0 V MSAE
MSAF 1.3

1.2

1.6

V

Reverse Recovery Time (Body Diode) t

rr

IF = 10 A, MSAE

-di/dt = 100 A/µs, MSAF

50
230

ns

Reverse Recovery Charge Q

rr

IF = 10 A, MSAE
di/dt = 100 A/µs, MSAF

tbd

1.8

µC

Electrical Parameters @ 25°°C (unless otherwise specified)

Notes

(1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.

MSAEZ33N20A

MSAFZ33N20A