Microsemi Corporation MSAFX50N20A Datasheet

2830 S. Fairview St.
Santa Ana, CA 92704
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MSAFX50N20A

Features

• Ultrafast body diode

• Rugged polysilicon gate cell structure

• Increased Unclamped Inductive Switching (UIS) capability

• Hermetically sealed, surface mount power package

• Low package inductance

• Very low thermal resistance

• Reverse polarity available upon request

ENHANCEMENT MODE

Maximum Ratings @ 25°°C (unless otherwise specified)

DESCRIPTION SYMBOL MAX. UNIT

200 Volts

50 Amps

45 mΩΩ

N-CHANNEL

POWER MOSFET

Drain-to-Source Breakdown Voltage (Gate Shorted to Source)

@ TJ ≥ 25°C

Drain-to-Gate Breakdown Voltage @ T

≥ 25°C, RGS= 1 MΩ BV

J

BV

Continuous Gate-to-Source Voltage V
Transient Gate-to-Source Voltage V
Continuous Drain Current Tj= 25°C

Tj=
100°C

Peak Drain Current, pulse width limited by T

Jmax

I

I

D100

I
Repetitive Avalanche Current I
Repetitive Avalanche Energy E
Single Pulse Avalanche Energy E
Voltage Rate of Change of the Recovery Diode

@ I

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

, TJ ≤ 150°C

DSS

dv/dt 5.0 V/ns

Power Dissipation P
Junction Temperature Range T
Storage Temperature Range T
Continuous Source Current (Body Diode) I
Pulse Source Current (Body Diode) I
Thermal Resistance, Junction to Case

θ

Mechanical Outline

DSS

DGR

GS

GSM

D25

DM

AR

AR
AS

D

stg
S

SM

JC

200 Volts

200 Volts
+/-20 Volts
+/-30 Volts

50

Amps

40

200 Amps

50 Amps
30 mJ

tbd mJ

300 Watts

j

-55 to +150

-55 to +150

°C
°C

50 Amps

200 Amps

0.25

°C/W

Datasheet# MSC0258B

DRAIN

GATE

SOURCE

MSAFX50N20A

Electrical Parameters @ 25°°C (unless otherwise specified)

DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT

Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage V
Gate-to-Source Leakage Current

Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current) I

Static Drain-to-Source On-State Resistance (1)

Forward Transconductance (1) g

∆BV

BV

R

DSS

GS(th)

I

GSS

DSS

DS(on)

DSS

fs

/∆T

VGS = 0 V, ID = 250 µA

J

200 V

tbd

VDS = VGS, ID = 4 mA 2.0 4.0 V
VGS = ± 20VDC, VDS = 0 TJ = 25°C
TJ = 125°C
VDS =0.8•BV

VGS

DSS TJ

= 0 V TJ = 125°C

= 25°C

VGS= 10V, ID= 25A TJ = 25°C
ID= 50A TJ = 25°C
ID= 25A TJ = 125°C
VDS ≥ 10 V; ID = 50 A

26 32 S

0.09

±100
±200

200

1000

0.045

0.055

V/°C

nA

µA

Ω

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time

T
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge

Q
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1) V

Reverse Recovery Time (Body Diode) t

Reverse Recovery Charge Q

C
C
C

t

d(off)

Q
Q

oss
rss

d(on)

t
t

g(on)

SD

rr

V

iss

= 0 V, VDS = 25 V, f = 1 MHz 4400

GS

pF
800
285

VGS = 10 V, VDS = 100 V,

r

f

ID = 25 A, RG = 2.00 Ω

VGS = 10 V, VDS = 100V, ID = 25A 190

gs
gd

20
15
75
20

35
95

25
20
90
25

220

50

110

ns

nC

IF = IS, VGS = 0 V 1.5 V
IF = 10 A, 25 C

-di/dt = 100 A/µs, 125 C

rr

IF = 10 A, 25 C
di/dt = 100 A/µs, 125 C

200
300

1.5

2.6

ns

µC

Notes

(1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.