Microsemi Corporation MSAFR12N50A, MSAER12N50A Datasheet
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAER12N50A
MSAFR12N50A
Features
• Ultrafast rectifier in parallel with the body diode (MSAE type only)
• Rugged polysilicon gate cell structure
• Increased Unclamped Inductive Switching (UIS) capability
• Hermetically sealed, surface mount power package
• Low package inductance
• Very low thermal resistance
• Reverse polarity available upon request
ENHANCEMENT MODE
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL MAX. UNIT
500 Volts
12 Amps
400 mΩΩ
N-CHANNEL
POWER MOSFET
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
Drain-to-Gate Breakdown Voltage @ T
≥ 25°C, RGS= 1 MΩ BV
J
BV
Continuous Gate-to-Source Voltage V
Transient Gate-to-Source Voltage V
Continuous Drain Current Tj= 25°C
Tj=
100°C
Peak Drain Current, pulse width limited by T
Jmax
I
I
D100
I
Repetitive Avalanche Current I
Repetitive Avalanche Energy E
Single Pulse Avalanche Energy E
Voltage Rate of Change of the Recovery Diode
@ I
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, TJ ≤ 150°C
DSS
dv/dt 3.5 V/ns
Power Dissipation P
Junction Temperature Range T
Storage Temperature Range T
Continuous Source Current (Body Diode) I
Pulse Source Current (Body Diode) I
Thermal Resistance, Junction to Case
θ
Mechanical Outline
DSS
DGR
GS
GSM
D25
DM
AR
AR
AS
D
stg
S
SM
JC
j
DRAIN
500 Volts
500 Volts
+/-20 Volts
+/-30 Volts
12
8
48 Amps
12 Amps
tbd mJ
8 mJ
300 Watts
-55 to +150
-55 to +150
12 Amps
48 Amps
0.4
Amps
°C
°C
°C/W
Datasheet# MSC0266B
GATE
SOURCE
MSAER12N50A
MSAFR12N50A
Electrical Parameters @ 25°°C (unless otherwise specified)
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage V
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current) I
Static Drain-to-Source On-State Resistance (1)
Forward Transconductance (1) g
∆BV
BV
R
DSS
GS(th)
I
GSS
DSS
DS(on)
DSS
fs
/∆T
VGS = 0 V, ID = 1000 µA
J
500 V
0.78
VDS = VGS, ID = 1 mA 2.0 4.0 V
VGS = ± 20VDC, VDS = 0 TJ = 25°C
TJ = 125°C
VDS =0.8•BV
VGS
DSS TJ
= 0 V TJ = 125°C
= 25°C
VGS= 10V, ID= 8A TJ = 25°C
ID= 12A TJ = 25°C
ID= 8A TJ = 125°C
VDS ≥ 15 V; ID = 8 A
5.5 S
0.800
±100
±200
25
250
0.400
0.500
V/°C
nA
µA
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
T
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Q
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1) V
Reverse Recovery Time (Body Diode) t
Reverse Recovery Charge Q
C
C
C
t
d(off)
Q
Q
oss
rss
d(on)
t
t
g(on)
SD
rr
V
iss
= 0 V, VDS = 25 V, f = 1 MHz 2700
GS
pF
600
240
VGS = 10 V, VDS = 250 V,
r
ID = 12 A, RG = 2.35 Ω
35
190
ns
170
f
VGS = 10 V, VDS = 250V, ID = 12A 55
gs
gd
5
27
IF = IS, VGS = 0 V MSAE
MSAF
IF = 10 A, MSAE
-di/dt = 100 A/µs, MSAF
rr
IF = 10 A, MSAE
di/dt = 100 A/µs, MSAF
130
120
19
70
1.2
1.7
70
1600
tbd
14
nC
V
ns
µC
Notes
(1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact factory for details
Loading...