Microsemi Corporation MSAFA75N10C Datasheet
MSAFA75N10C
SSSS
New generation N-channel enhancement mode power MOSFET with
rugged polysilicon gate structure and fast switching intrinsic rectifier. The
very rugged Coolpack2
DESCRIPTION
TM
surface-mount package is lightweight, space
saving and hermetically sealed for high reliability and/or military/space
application.
IMPORTANT:
For the most current data, consult
Description Symbol Max. Unit
Drain-to-Source Voltage (Gate Shorted to Source)
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Peak Drain Current, pulse width limited by
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy (3)
Total Power Dissipation @
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
MAXIMUM RATINGS @ 25°C (unless otherwise specified)
T
=25°C
c
MICROSEMI
T
Jmax
’s website:
T
= 25°C
j
T
= 100°C
j
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
•
Ultrafast body diode
•
Increased Unclamped
Inductive Switching (UIS)
capability
•
Hermetically sealed, surface
mount power package
•
Very low package inductance
•
Very low thermal resistance
•
http://www.microsemi.com
Reverse polarity available
upon request
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
•
DC-DC converters
•
Motor controls
•
Uninterruptible Power
Supply(UPS)
•
DC choppers
•
Synchronous rectification
•
Inverters
V
DSS
V
GS
V
GSM
I
D25
I
D10
0
I
DM
I
AR
E
AR
E
AS
P
D
Tj
T
stg
I
S
I
SM
θ
JC
100 Volts
+/-30 Volts
+/-40 Volts
75
60
300 Amps
75 Amps
30 mJ
1500 mJ
540 Watts
-55 to
+150
-55 to
+150
75 Amps
300 Amps
0.23
Amps
°
C
°
C
°
C/W
WWW.
Microsemi
.
COM
M
M
S
S
A
A
F
F
A
A
7
7
5
5
N
N
1
1
0
0
C
C
Copyright 2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
MSAFA75N10C
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
WWW.
Description Symbol Conditions Min Typ. Max Unit
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Gate Threshold Voltage
Static Drain-to-Source On-State Resistance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
BV
I
I
V
GS(th)
R
DS(on)
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
V
DSS
GSS
DSS
iss
oss
rss
t
r
t
f
g(on)
gs
gd
SD
t
rr
Q
rr
V
GS
V
GS
V
DS
V
GS
V
DS
V
GS
V
GS
V
GS
I
= 37.5 A,
D
V
GS
I
= 75A,
s
I
= 10 A, di/dt = 100 A/µs
F
I
= 10 A, di/dt = 100 A/µs
F
= 0 V,
= ± 30
BV
=0.8•
= 0 V
V
=
GS
= 10V,
= 0 V,
= 15 V,
= 10 V,
V
I
= 250 µA
D
V
V
,
= 0
DC
DS
DSS
I
,
= 1 mA
D
I
= 37.5A
D
I
= 75A
D
I
= 37.5A
D
V
= 25 V, f = 1 MHz
DS
V
= 50 V,
DS
R
= 1.6 Ω
G
V
= 50V,
DS
= 0 V
GS
T
= 25°C
J
T
= 125°C
J
T
= 25°C
J
T
= 25°C
J
T
= 125°C
J
I
= 37.5A
D
100 V
250
2.0 4.0 V
5100
16
1.3
200 ns
1.4
0.02
0.035
1900
800
40
50
20
200
40
92
±100
1000
0.019
6120
2660
1200
32
40
75
40
300
60
180
nA
µA
Ω
pF
ns
nC
V
µC
Microsemi
.
COM
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
Copyright 2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
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