Microsemi Corporation MSAFA1N100P3 Datasheet
Santa Ana Division
MOSFET Device
Features
• Low On-State resistance
• Avalanche and Surge Rated
• High Frequency Switching
• Ultra low Leakage Current
• UIS rated
• Available with Lot Acceptance Testing “L” Suf fix
• Available with “J” leads
Applications
• Implantable Cardio Defibrillator
Testing and Screening (per lot)
• 100% Testing at 25C, DC parameters
• Sample T est (22/0), AC, Hot and Cold Parameters (min/max limits)
Maximum Ratings
MSAF A1N100P3
1 Amp
1000 V
N-Channel
enhancement mode high
density
SYMBOL PARAMETER VA LUE UNIT
VDSS Drain - Source Voltage 1000 Volts
VGS Gate - Source Voltage ±20 Volts
ID1 Continuous Drain Current @ TC = 25 1 Amps
ID2 Continuous Drain Current @ TC = 100 0.8 Amps
IDM1 Pulsed Drain Current 4 Amps
IAR Av alanche Current 1 Amps
EAR Repetitiv e Avalanche Energy TBD mJ
EAS Single Pulse Avalanche Energy TBD mJ
TJ , TSTG Operating and Storage: Junction Temperature Range -55 to 150 C
Static Electrical Characteristics
SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT
BVD SS Drain - Sou rce Breakdown Voltage (VGS = 0V, ID = 0.25mA) 1000 Volts
VGS(T H)2 Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C) 3.4 Volts
VGS(T H)1 Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C) 2 3.5 4.5 Volts
RDS(ON)1 D rain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C) 12.5 13.5 ohm
RDS(ON)2 D rain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37C) 12.5 ohm
RDS(ON)3 D rain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25C) 11.5 14 ohm
RDS(ON)4 D rain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ = 60C) 15 ohm
RDS(ON)5 D rain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C) 23.5 ohm
IDSS1 Zer o Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C) 10 uA
IDSS2 Zer o Gate Voltage Drain Current (VD S = 80%BVDSS, VGS = 0V, TJ = 37C) 1 uA
IDSS3 Zer o Gate Voltage Drain Current (VD S = 80%BVDSS, VGS = 0V, TJ = 125C) 100 uA
IGSS1 Gate-Source Leakage Current (VGS = ±20V, VCE =0V) ±100 nA
IGSS2 Gate- Source Leakage Current (VGS= ±20V VCE =0V), T j= 37C 10 nA
IGSS3 Gate- Source Leakage Current (VGS= ±20V VCE =0V), T j= 125C 500 nA
2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 F AX (714)557.5989
Data Sheet # MSC Updated: December 1999
www.MICROSEMI.com
Santa Ana Division
MSAF A1N100P3
Fast MOSFET for
Implantable Cardio Defibrillator
Applicaions
Dynamic Electrical Characteristics
SYM B OL CHARACT ERISTIC TES T CONDI T IONS MI N T YP MAX UNI T
Cis s Input Capac i tanc e VGS = 0V 290 350 pF
Coss Output Capaci t ance VDS = 25V 36 45 pF
Crss Reverse Trans fer Capacit anc e f = 1 MHz 15 25 pF
Qg Total G ate Charge VGS = 10V 20 nC
Qgs Gat e-Sou rce Charge VDS = 0.5B VDS S 1 nC
Qgd Gate-Drain ("M ill er") Charge IC = 20 mA 10 nC
td (on) Turn-on Delay Time Resi st i ve Swit c hing (25C) 6. 3 ns
t r Rise Tim e VG S = 1 0V , V DS = 0.5B VDS S 5. 9 n s
td (off) Turn-off Delay Time ID = 20 mA 315 ns
tf Fall Time Rg = 1.6Ohms 2.6 us
td (on) Turn-On Delay Time Resi st i ve Swit c hing (25C) 6. 3 ns
t r Rise Tim e VG S = 1 0V , V DS = 0.5B VDS S 5. 8 n s
td (off) Turn-off Delay Time ID = 10 0 mA 76 ns
tf F all Time Rg = 1.6 Ohm s 470 ns
VS D Diode Forward Vol tage VGS =0 V, IS = 1 A 1 V
trr Revers e Recovery Tim e IS = 1 A, d IS / dt = 100 A/us 130 ns
Qrr Reverse Recovery Charge IS = 1 A, d IS / dt = 100 A /us 0.7 uC
2830 south Fairview Street, Santa Ana, CA 92704 USA (714)979.8220 F AX (714)557.5989
Data Sheet # MSC Updated: December 1999
www.MICROSEMI.com
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