Microsemi Corporation MSAFA1N100D Datasheet

2830 S. Fairview Street
Santa Ana, CA 92704
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MSAFA1N100D

Fast MOSFET Die for

Implantable Cardio Defibrillator

Applications

DESCRIPTION:

• N-Channel enhancement mode high density MOSFET die

• Passivation: oxynitride, 4um

• Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.

• Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach

FEATURES:

• Low On-state resistance

• Avalanche and Surge Rated

• High Freq. Switching

• Ultra Low Leakage Current

• UIS rated

• Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix

MAXIMUM RATINGS:

SYMBOL PARAMETER VALUE UNIT

V

DSS

V

GS

I

D1

I

D2

I

DM1

I

AR

E

AR

E

AS

T

J, TSTG

Drain - Source Voltage 1000 Volts
Gate - Source Voltage ±20 Volts
Continuous Drain Current @ TC = 25°°C 1 Amps
Continuous Drain Current @ TC = 100°°C .8 Amps
Pulsed Drain Current ¬¬ @ TC = 25°°C 4 Amps
Avalanche Current 1 Amps
Repetitive Avalanche Energy TBD mJ
Single Pulse Avalanche Energy TBD mJ
Operating and Storage: Junction Temperature Range -55 to 150 °°C

STATIC ELECTRICAL CHARACTERISTICS:

SYMBOLCHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT

BV

DSS

V

GS(TH)2

V

GS(TH)1

R

DS(ON)1

R

DS(ON)2

R

DS(ON)3

R

DS(ON)4

R

DS(ON)5

I

DSS1

I

DSS2

I

DSS3

I

GSS1

I

GSS2

I

GSS3

Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
Gate Threshold Voltage (V
Gate Threshold Voltage (V
Drain – Source On-State Resistance (V

Drain – Source On-State Resistance (V
Drain – Source On-State Resistance (V
Drain – Source On-State Resistance (V
Drain – Source On-State Resistance (V
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate-Source Leakage Current (V
Gate-Source Leakage Current (V

= VDS, ID = 1 mA, T

GS

= VDS, ID = 1 mA, T

GS

= 10V, ID = I

GS

= 7V, ID = 5…150 mA, TJ= 37°°C)

GS

= 7V, ID = 5…150 mA, TJ= 25°°C)

GS

= 7V, ID = 5…150 mA, TJ= 60°°C)

GS

= 7V, ID = I

GS

= 80%BV

DS

= 80%BV

DS

= 80%BV

DS

= ±20V, VCE =0V)

GS

= ±20V VCE =0V), Tj= 37°°C

GS

= ±20V VCE =0V), Tj= 125°°C

GS

= 37°°C

J

= 25°°C

J

D1, TJ

D1, TJ

, VGS = 0V, TJ = 25°°C)

DSS

, VGS = 0V, TJ = 37°°C)

DSS

, VGS = 0V, TJ = 125°°C)

DSS

= 25°°C)

= 125°°C)

1000 Volts

3.4 Volts

2 3.5 4.5 Volts

12.5 13.5 ohm

12.5 ohm

11.5 ohm
15 ohm

23.5 ohm

10 uA

1 uA

100 uA

±100 nA

10 nA

500 nA

MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T

= 25°C unless otherwise specified

C

MSAFA1N100D

Fast MOSFET Die for

Implantable Cardio Defibrillator

Applications

DYNAMIC CHARACTERISTICS:

SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNIT

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance

Reverse Transfer Capacitance f = 1 MHz 15 25 pF
Qg Total Gate Charge ¯¯
Qgs Gate-Source Charge

Qgd Gate-Drain ("Miller") Charge

td (on)
t

r

td (off)
t

f

td (on)
t

r

td (off)
t

f

V

SD

Turn-on Delay Time Resistive Switching (25°°C) 6.3 ns

Rise Time

Turn-off Delay Time

Fall Time

Turn-On Delay Time Resistive Switching (25°°C) 6.3 ns

Rise Time

Turn-off Delay Time

Fall Time

Diode Forward Voltage

trr Reverse Recovery Time

Q

rr

Reverse Recovery Charge

V

= 0V

GS

V

= 25V

DS

VGS = 10V

VDS = 0.5BV

I

= 20 mA

C

DSS

VGS = 10V, VDS = 0.5BV

I

= 20 mA

D

R

= 1.6ΩΩ

g

VGS = 10V, VDS = 0.5BV

I

= 100 mA

D

R

= 1.6ΩΩ

g

V

=0 V, IS = 1 A

GS

I

= 1 A, d IS / dt = 100 A/us

S

I

= 1 A, d IS / dt = 100 A/us

S

DSS

DSS

290 350 pF

36 45 pF

20 nC

1 nC

10 nC

5.9 ns

315 ns

2.6 us

5.8 ns
76 ns

470 ns

1 V

130 ns

.7 uC

¬ Repetitive Rating: Pulse width limited by maximum junction temperature.

- IC = I
® TJ = 150°°C
¯ See MIL-STD-750 Method 3471

= 50V, RCE = 25ΩΩ, L = 300µµH, TJ = 25°°C

C2, VCC

DIE PROBE PARAMETERS (100% TESTS):

SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT
BV

DSS

VGS(TH) Gate Threshold Voltage (VDS = VGS, IC = 1000µµA, TJ = 25°°C 2 4.5
RDS (ON) Drain-Source On-Resistance (VGS = 10V, IC = 1 A, TJ = 25°°C) 14 ohm
I

DSS

I

GSS

MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T

Drain-Source Breakdown Voltage (VGS = 0V, IC = 0.25mA) 1000 Volts

Zero Gate Voltage Drain Current (VDS = 800 V, VGS = 0V, TJ = 25°°C) 25 uA
Gate-Source Leakage Current (VGS = ±20 V, VDS =0V) ±100 nA

= 25°C unless otherwise specified

C