Microsemi Corporation MS2575 Datasheet
MS2575
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTION
DESCRIPTIONDESCRIPTION
The MS2575 is a medium power Class C transistor designed
specifically for pulsed L-Band avionics applications.
Low RF thermal resistance and computerized automatic wire bonding
techniques ensure high reliability and product consistency.
The MS2575 is housed in the IMPAC package with internal input
matching.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
Refractory/Gold
Metallization
Emitter Site Ballasted
∞ :1 VSWR Capability
Low Thermal
Resistance
Input Matching
Overlay Geometry
Metal/Ceramic Hermetic
Package
RF & MICROWAVE TRANSISTORS
P
= 35 W Min.
OUT
GP = 10.7 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
Avionics Applications
Symbol Parameter Value Unit
P
DISS
T
V
I
T
C
CC
J
STG
ABSOLUTE MAXIMUM RATINGS (T
Power Dissipation (TC ≤ 100°C)
Device Current* 3.0 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature -65 to +150
CASE
= 25°
°C)
°°
150 W
°C
°C
R
TH(j-c)
Applies only to rated RF amplifier operation
Note: Thermal Resistance determined by Infra-Red Scanning of Hot Spot
Junction Temperature at rated RF operating conditions.
Junction-Case Thermal Resistance 1.0
THERMAL DATA
°C/W
PIN CONNECTION
1
4
2
1. COLLECTOR 3. EMITTER
2. BASE 4. BASE
3
Copyright 2000
MSC1666.PDF 2001-01-24
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Microsemi
RF Products Division
Page 1
WWW.Microsemi . COM
M
M
S
S
2
2
5
5
7
7
5
5
MS2575
RF PRODUCTS DIVISION
Symbol Test Conditions
BV
BV
BV
I
h
CES
I
CBO
I
EBO
CER
V
V
FE
= 10 mA IE = 0 mA
C
= 1 mA IC = 0 V
E
I
= 10 mA RBE = 10 Ω
C
= 0 V vCE = 50 V
BE
= 5 V IC = 500 mA
CE
Symbol Test Conditions
P
OUT
ηηηηc
GP
f = 1025 – 1150 MHz P
f = 1025 – 1150 MHz P
f = 1025 – 1150 MHz P
Note: Pulse width = 10µSec
Duty Cycle = 1%
RF & MICROWAVE TRANSISTORS
STATIC ELECTRICAL SPECIFICATIONS (T
DYMANIC ELECTRICAL SPECIFICATIONS (T
= 3.0 W VCC = 50 V
IN
= 3.0 W VCC = 50 V
IN
= 3.0 W VCC = 50 V
IN
= 25°°°°C)
CASE
MS2575
Min. Typ. Max.
Units
65 V
3.5 V
65 V
5 mA
15 120
= 25°°°°C)
CASE
MS2575
Min. Typ. Max.
Units
35 40 W
10.7 11.2
%
43 48 dB
WWW.Microsemi . COM
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
Copyright 2000
MSC1666.PDF 2001-01-24
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 2
Loading...