Microsemi Corporation MS2475 Datasheet
Symbol
Parameter
Value
Unit
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• DESIGNED FOR HIGH POWER PULSED IFF
• 720 WATTS (min.) IFF 1030 or 1090 MHz
• REFRACTORY GOLD METALLIZATION
• 6.8 dB MIN. GAIN
• LOW THERMAL RESISTANCE FOR RELIABILTY AND
RUGGEDNESS
• 30:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• INPUT MATCHED, COMMON BASE CONFIGURATION
DESCRIPTION:DESCRIPTION:
The MS2475 is a silicon NPN power transistor designed for IFF
applications. The MS2475 is designed to exceed the high peak
power requirements of today's IFF systems. Hermetic sealing,
gold metalization and internal input matching provide superior
long term reliability and broadband performance.
MS2475
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
V
CC
I
C
P
DISS
T
J
T
STG
Thermal DataThermal Data
R
* Applies only to rated RF operation.
MSC0937A.DOC 10-20-98
TH(j-c)
Collector-Supply Voltage* 55 V
Device Current* (TC ≤≤ 100°°C)
45 A
Power Dissipation* 1670 W
Junction Temperature +200
Storage Temperature - 65 to + 200
Junction-Case Thermal Resistance* 0.06
°°C
°°C
°°C/W
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
Value
Min.
Typ.
Max.
Unit
Value
Min.
Typ.
Max.
Unit
STATICSTATIC
Symbol Test Conditions
MS2475
BV
BV
BV
I
CES
h
CBO
CER
EBO
FE
I
= 25 mA IE = 0 mA 65 ---- ---- V
C
I
= 25 mA R
C
I
= 10 mA IC = 0 mA 3.5 ---- ---- V
E
V
= 50 V V
CE
V
= 5 V IC = 2 A 10 ---- 250 ----
CE
= 10 Ω 65 ---- ---- V
BE
= 0 V ---- ---- 60 mA
BE
DYNAMICDYNAMIC
Symbol Test Conditions
P
OUT
VV
C
G
P
Note: Pulse width = 10µµSec. Duty Cycle = 1%
f = 1090 MHz PIN = 150 W VCC = 50 V 720 ---- ---- W
f = 1090 MHz PIN = 150 W VCC = 50 V 35 ---- ---- %
f = 1090 MHz PIN = 150 W VCC = 50 V 6.8 ---- ---- dB
IMPEDANCE DATA:IMPEDANCE DATA:
MSC0937A.DOC 10-20-98
FREQUENCY Zin Zcl
1030 MHz 4.18 + j1.32 0.81 + j0.55
1090 MHz 3.16 + j1.24 0.75 + j0.60
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