Microsemi Corporation MS2393 Datasheet
MS2393
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTION
DESCRIPTIONDESCRIPTION
The MS2393 is a gold metallized, silicon NPN power transistor.
The MS2393 is designed for applications requiring high peak power
and low duty cycles such as IFF, DME and TACAN. The MS2393 is
packaged in a metal/ceramic package with internal input/output
matching, resulting in improved broadband performance and low
thermal resistance.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
RF & MICROWAVE TRANSISTORS
Symbol Parameter Value Unit
V
V
V
P
T
R
TH(j-c)
ABSOLUTE MAXIMUM RATINGS (T
Collector-Base Voltage 65 V
CBO
Collector-Emitter Voltage 65 V
CES
Emitter-Base Voltage 3.5 V
EBO
I
C
DISS
T
STG
J
Device Current 11 A
Power Dissipation 583 W
Junction Temperature +200
Storage Temperature -65 to +150
THERMAL DATA
Junction-Case Thermal Resistance 0.30
CASE
= 25°
°C)
°°
°C
°C
°C/W
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
Designed For High
Power Pulse IFF, DME,
and TACAN
Applications
200 W (typ.) IFF 1030 –
1090 MHz
150 W (min.) DME 1025
– 1150 MHz
140 W (typ.) TACAN
960 – 1215 MHz
8.2 dB Gain
Refractory Gold
Metallization
Ballasting And Low
Thermal Resistance For
Reliability And
Ruggedness
30:1 Load VSWR
Capability At Specified
Operating Conditions
Input And Output
Matched Common Base
Configuration
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITSSSS
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
WWW.Microsemi . COM
Copyright 2000
MSC1660.PDF 2001-01-30
Avionics Applications
Microsemi
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
RF Products Division
Page 1
M
M
S
S
2
2
3
3
9
9
3
3
MS2393
RF PRODUCTS DIVISION
WWW.Microsemi . COM
RF & MICROWAVE TRANSISTORS
STATIC ELECTRICAL SPECIFICATIONS (T
Symbol Test Conditions
BV
BV
BV
I
h
CES
I
CBO
I
CES
I
EBO
V
V
FE
= 10 mA IE = 0 mA
C
= 25 mA VBE = 0 V
C
= 5 mA IC = 0 mA
E
= 50 V IE = 0 mA
CE
= 5 V IC = 300 mA
CE
= 25°°°°C)
CASE
MS2393
Min. Typ. Max.
Units
65 V
65 V
3.5 V
10 mA
5
DYMANIC ELECTRICAL SPECIFICATIONS (T
Symbol Test Conditions
Condition
P
OUT
G
P
f = 1025 – 1150 MHz P
f = 1025 – 1150 MHz P
= 25 W VCE = 50 V
IN
= 25 W VCE = 50 V
IN
Pulse Width = 10µS, Duty Cycle = 1%
= 25°°°°C)
CASE
MS2393
Min. Typ. Max.
Units
150 W
8.2 dB
Copyright 2000
MSC1660.PDF 2001-01-30
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 2
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
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