Microsemi Corporation MS2215 Datasheet
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation * (TC
≤≤
°
C)
300
I
C
Device Current *
16.5
A
V
CC
Collector - Supply Voltage *
35
V
T
J
Junction Temperature (Pulsed RF Operation)
250
°°
C
T
STG
Storage Temperature *
- 65 to + 200
°°
C
R
TH(j-c)
Junction-Case Thermal Resistance *
0.57
°°
C/W
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• • REFRACTORY/GOLD METALLIZATION
• • EMITTER SITE BALLASTED
• • LOW THERMAL RESISTANCE
• • INPUT/OUTPUT MATCHING
• • OVERLAY GEOMETRY
• • METAL/CERAMIC HERMETIC PACKAGE
• • P
= 150 W MIN. WITH 7.5 dB Gain
OUT
MS2215
DESCRIPTION:DESCRIPTION:
The MS2215 is designed for specialized avionics applications,
including Mode-S, TCAS and JTIDS where power is provided
under pulse formats utilizing short pulse widths and high burst or
overall duty cycles.
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Thermal DataThermal Data
* Applies only to rated RF amplifier operation
MSC0921.PDF 9-23-98
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BV
CBO
I
C
I
E
5565----VBV
EBO
I
E
I
C
3.5
----
----
V
I
C
55
----
----VI
CES
V
CE
----
----25mA
h
FE
V
CE
I
C
20
----
----
----
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
V
CC
150
----
----
W
V
CC
45
----
----
%
STATICSTATIC
MS2215
BV
CES
= 60 mA
= 10 mA
= 100 mA
= 35 V
= 5V
= 0 mA
= 0 mA
= 5 A
DYNAMICDYNAMIC
P
OUT
VV
C
G
P
Note: Pulse format: 6.4 µµs on 6.6 µµs off, repeat for 3.3 ms, then off for 4.5125 ms.
Duty Cycle: Burst 49.2%, Overall 20.8%
f = 960 - 1215 MHz PIN = 26.7 W
f = 960 - 1215 MHz PIN = 26.7 W
f = 960 - 1215 MHz PIN = 26.7 W VCC = 35 V 7.5 ---- ---- dB
= 35 V
= 35 V
MSC0921.PDF 9-23-98
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