Microsemi Corporation MS2211 Datasheet
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation * (TC ≤≤ 75°°C)
25
W
I
C
Device Current *
0.9
A
V
CC
Collector - Supply Voltage *
32
V
T
J
Junction Temperature (Pulsed RF Operation)
250
°°
C
T
STG
Storage Temperature
- 65 to + 200
°°
C
R
TH(j-c)
Junction-Case Thermal Resistance *
7.0
°°
C/W
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
• • REFRACTORY/GOLD METALLIZATION
• • EMITTER SITE BALLASTED
• • 5:1 VSWR CAPABILITY
• • LOW THERMAL RESISTANCE
• • INPUT/OUTPUT MATCHING
• • OVERLAY GEOMETRY
• • METAL/CERAMIC HERMETIC PACKAGE
• • P
= 6.0 W MIN. WITH 9.3 dB Gain
OUT
MS2211
DESCRIPTION:DESCRIPTION:
The MS2211 is designed for specialized avionics applications,
including JTIDS, where power is provided under pulse formats
utilizing short pulse widths and high burst or overall duty cycles.
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Thermal DataThermal Data
* Applies only to rated RF amplifier operation
MSC0919.PDF 9-23-98
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BV
CBO
I
C
I
E
48
----
----VBV
EBO
I
E
I
C
3.5
----
----
V
I
C
R
BE
48
----
----VI
CES
V
BE
V
CE
----
----
0.5mAh
FE
V
CE
I
C
30
----
300
----
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
V
CC
6.0
----
----
W
V
CC
45
----
----
%
STATICSTATIC
MS2211
BV
CER
= 1 mA
= 1 mA
= 5 mA
= 0V
= 5V
= 0 mA
= 0 mA
=10Ω
= 28 V
= 250 mA
DYNAMICDYNAMIC
P
OUT
VV
C
G
P
Note: Pulse format: 6.4 µµs on 6.6 µµs off, repeat for 3.3 ms, then off for 4.5125 ms.
Duty Cycle: Burst 49.2%, Overall 20.8%
f = 960 - 1215 MHz PIN = 0.7 W
f = 960 - 1215 MHz PIN = 0.7 W
f = 960 - 1215 MHz PIN = 0.7 W VCC = 28 V 9.3 ---- ---- dB
= 28 V
= 28 V
MSC0919.PDF 9-23-98
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