Microsemi Corporation MS2209 Datasheet
Symbol
Parameter
Value
Unit
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATION
Features
• • REFRACTORY/GOLD METALIZATION
• • LOW THERMAL RESISTANCE
• • INPUT/OUTPUT MATCHING
• • OVERLAY GEOMETRY
• • EMITTER SITE BALLASTED
MS2209
DESCRIPTION:DESCRIPTION:
THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND,
HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED
FOR AVIONICS APPLICATIONS REQUIRING BROAD BANDWIDTH
WITH MODERATED DUTY CYCLE AND PULSE WIDTH
CONSTRAINTS SUCH AS GROUND/SHIP BASED DME/TACAN.
THIS DEVICE IS ALSO CAPABLE OF SPECIALIZED
APPLICATIONS INCLUDING JTIDS WITH REDUCED POWER
UNDER PULSE FORMATS UTILIZING SHORT PULSE WIDTHS
AND HIGH BURST OR OVERALL DUTY CYCLES.
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
P
V
T
DISS
I
C
CC
T
J
STG
Power Dissipation* (T
Device Current * 7.0 A
Collector Supply Voltage* 50 V
Junction Temperature 250
Storage Temperature -65 to +200
≤≤100ºC)
C
220 W
°°C
°°C
Thermal DataThermal Data
R
TH(J-C)
*Applies only to rated RF amplifier operation
MSC0930.PDF 10-13-98
Junction - Case Thermal Resistance 0.80
°°C/W
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
STATICSTATIC
Bvebo IE = 10 mA IC=0 mA 3.0 --- --- V
Bvcbo IC = 40 mA IE=0 mA 65 --- --- V
Bvcer
Icbo V
HFE V
IC = 40 mA RBE=10Ω
= 50V --- --- 12 mA
CB
= 5.0 V IC=2 A 20 --- 120 B
CE
DYNAMICDYNAMIC
MS2209
65 --- --- V
P
out
ηη
c
G
P
Conditions
f=960-1215 MHz P
f=960-1215 MHz P
f=960-1215 MHz P
Pulse width=10µµsec, Duty Cycle= 10%
= 13W VCC=50V 90 100 --- W
in
= 13W VCC=50V 38 44 --- %
in
= 13W VCC=50V 8.4 --- --- dB
in
PACKAGE MECHANICAL DATA
MSC0930.PDF 10-13-98
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