Microsemi Corporation MS2208 Datasheet

Symbol

Parameter

Value

Unit

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]

RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATION

Features

• • HERMETIC METAL/CERAMIC PACKAGE

• • LOW THERMAL RESISTANCE

• • 10:1 LOAD VSWR CAPABILITY

• • BALLASTED OVERLAY GEOMETRY

• • COMMON EMITTER CONFIGURATION

MS2208

DESCRIPTION:DESCRIPTION:

THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR
SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS
INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS
CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE
WIDTHS, DUTY CYCLES AND TEMPERATURES.

ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

P

V

T

DISS

I

C
CC

T

J

STG

Power Dissipation* (T
Device Current * 27 A
Collector Supply Voltage* 55 V
Junction Temperature 250
Storage Temperature -65 to +200

≤≤100ºC)

C

Thermal DataThermal Data

R

TH(J-C)

*Applies only to rated RF amplifier operation

Junction - Case Thermal Resistance 0.11

1360 W

°°C
°°C

°°C/W

MSC0926.PDF 10-09-98

ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

Symbol

Test Conditions

Value

Min.

Typ.

Max.

Unit

STATICSTATIC

Bvebo IE = 30 mA IC=0 mA 3.0 --- --- V
Bvcbo IC = 50 mA IC=0 mA 70 --- --- V

Bvces IC = 50 mA VBE=0 V 70 --- --- V

Ices V
HFE V

= 50 mA VCE=50 V --- --- 40 mA

BE

= 5.0 V IC=1 A 10 --- 200 B

CE

DYNAMICDYNAMIC

MS2208

P

out

ηη

c

G

P

Load

Mismatch

Conditions

P

= 70W f=1090 MHz VCC=50V 500 --- --- W

in

P

out

P

out

P

=500W Peak f=1090 MHz, Vcc=50V, VSWR=10:1, 10µµsec, 1% Duty, VSWR=5:1, 32µµsec, 2% Duty

out

Pulse width=32µµsec, Duty Cycle= 2%

f=1090 MHz VCC=50V 40 --- --- %
f=1090 MHz VCC=50V 8.5 --- --- dB

IMPEDANCE DATAIMPEDANCE DATA

FREQ

1030 MHz 4.35+ j 6.97 1.38- j 4.08

1090 MHz 4.38+ j 2.75 0.874- j 3.55

1120 MHz 4.69+ j 2.95 1.3- j 4.97

PIN=70W VCC=50V

ZIN(Ω)Ω) ZCL(Ω)Ω)

MSC0926.PDF 10-09-98