RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTION
DESCRIPTIONDESCRIPTION
RF & MICROWAVE TRANSISTORS
The MS2176 is a gold metallized silicon NPN pulse power
transistor. The MS2176 is designed for applications requiring high
peak power and low duty cycles within the frequency range of 400 –
500 MHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
C)
°°°°
Symbol Parameter Value Unit
V
V
V
P
T
R
TH(j-c)
ABSOLUTE MAXIMUM RATINGS (T
Collector-Base Voltage 65 V
CBO
Collector-Emitter Voltage 65 V
CES
Emitter-Base Voltage 3.5 V
EBO
I
C
DISS
T
STG
J
Device Current 21.6 A
Power Dissipation 875 W
Junction Temperature +200
Storage Temperature -65 to +150
THERMAL DATA
Junction-Case Thermal Resistance 0.2
CASE
= 25
°C
°C
°C/W
PIN CONNECTION
1
2
1. Collector
2. Base
3
3. Emitter
4. Base
Copyright 2000
MSC1651.PDF 2001-01-04
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Microsemi
RF Products D ivision
4
KEY FEATURES
KEY FEATURES
KEY FEATURES KEY FEATURES
350 Watts @ 10µSec
Pulse Width, 10%
Duty Cycle
300 Watts @
250µSec Pulse Width
10% Duty Cycle
9.5 dB Min. Gain
Refractory Gold
Metallization
Emitter Ballasting And
Low Thermal
Resistance For
Reliability and
Ruggedness
Infinite VSWR
Capability At
Specified Operating
Conditions
APPLICATIONS/B
APPLICATIONS/BENEFITS
APPLICATIONS/BAPPLICATIONS/B
UHF Pulsed
Applications
.400 X .400 2LFL (M106)
hermetically sealed
MS2176
ENEFITS
ENEFITSENEFITS
Page 1
WWW.
Microsemi
. COM
M
M
S
S
2
2
1
1
7
7
6
6
RF PRODUCTS DIVISION
STATIC ELECTRICAL SPECIFICATIONS (T
Symbol Test Conditions
BV
BV
BV
BV
I
h
I
CBO
CES
CEO
EBO
V
CES
FE
I
I
I
V
=
C
=
C
=
C
=
E
CB
CE
50 mA
50 mA
50 mA
10 mA
=
30 V
=
5 V
I
V
I
I
I
I
E
B
C
E
C
=
0 mA
=
BE
=
0 mA
=
0 mA
=
0 mA
= 5
0 V
A
DYMANIC ELECTRICAL SPECIFICATIONS (T
Symbol Test Conditions
Note: Pulse Width = 250µSec, Duty Cycle = 10%
P
OUT
G
ηC
P
=
f
425 MHz
=
f
425 MHz
=
f
425 MHz
=
P
33.5 W V
IN
=
P
300 W V
IN
=
P
25 W V
IN
Copyright 2000
MSC1651.PDF 2001-01-04
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
RF & MICROWAVE TRANSISTORS
=
40 V
CE
=
40 V
CE
=
40 V
CE
Microsemi
RF Products D ivision
MS2176
WWW.
Microsemi
= 25°°°°C)
CASE
MS2176
Min. Typ. Max.
65 V
65 V
28 V
3.5 V
7.5 mA
10 100
= 25°°°°C)
CASE
MS2176
Min. Typ. Max.
300 W
9.5 dB
55
Units
Units
%
Page
. COM
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S