Microsemi Corporation MS1578 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
800-960MHz CELLULAR BASE STATION
FeaturesFeatures
• GOLD METALLIZATION
• • DESIGNED FOR LINEAR OPERATION HIGH SATURATED
POWER CAPABILITY
• • POUT = 150 W PEP
• • INTERNAL INPUT/OUTPUT MATCHING
• • COMMON EMITTER CONFIGURATION
• • 8.0dB GAIN @ 900 MHz
• • MAX IMD -28dBc @ 150 W PEP
• • 5:1 VSWR CAPABILITY @ RATED CONDITIONS
• • 3 dB OVERDRIVE CAPABILITY
MS1578
DESCRIPTION:DESCRIPTION:
THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN
PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB
OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE
MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz
CELLULAR BASE STATION APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol Parameter Value Unit
P
V
V
V
T
CEO
CBO
EBO
I
C
DISS
T
J
STG
Collector-Emitter Voltage 28 V
Collector-Base Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 25 A
Power Dissipation 300 W
Junction Temperature +200
Storage Temperature - 65 to + 150
°°C
°°C
Thermal DataThermal Data
R
TH(j-c)
MSC0890.PDF
Junction-Case Thermal Resistance 0.60
°°C/W
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
I
CEO
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
STATICSTATIC
MS1578
BV
CBO
BV
CER
BV
CEO
BV
EBO
h
FE
Tested per side
IC = 50 mA VBE = 0 V 60
IC = 100 mA RBE = 75 ΩΩ
IC = 100 mA IB = 0 mA 28 --- --- V
IE = 10 mA IC = 0 mA 3.5 --- --- V
VCE = 30 V VBE = 0 V
VCE = 5 V IC = 6 A 25 --- 120
DYNAMICDYNAMIC
GP* VCC = 26 Vdc P
VV
*
C
IMD VCC = 26 Vdc P
LOAD*
MISMATCH
*Note: f1 = 900.0 MHz f2 = 900.1 MHz
VCC = 26 Vdc P
VCC = 26 Vdc P
VSWR = 5:1 @ all phase angles
= 150 W PEP I
OUT
= 150 W PEP I
OUT
= 150 W PEP I
OUT
= 150 W PEP I
OUT
35 --- --- V
--- ---
2 x 200 mA 8.5 9.0 --- dB
CQ =
2 x 200 mA 30 --- --- %
CQ =
2 x 200 mA --- -32 -28 dBc
CQ =
2 x 200 mA
CQ =
10 mA
IMPEDANCE DATAIMPEDANCE DATA
FREQ
800 MHz 4.25 + j12.25 5.75 - j4.25
860 MHz 4.75 + j10.25 5.00 - j3.00
900 MHz 7.75 + j10.25 4.25 - j2.90
960 MHz 8.50 + j 9.50 3.40 - j2.85
1000 MHz 8.50 + j13.25 2.75 - j3.15
P
= 150W PEP VCE=26V
OUT
MSC0890.PDF 01-20-99
ZIN(Ω)Ω) ZCL(Ω)Ω)
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