Microsemi Corporation MS1226 Datasheet
140 COMMERCE DRIVE
Symbol
Parameter
Value
Unit
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
FeaturesFeatures
• 30 MHz
• 28 VOLTS
• IMD = -28 dB
• P
• G
= 30 WATTS
OUT
= 18 dB MINIMUM
P
• COMMON EMITTER CONFIGURATION
DESCRIPTION: DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
MS1226
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
STG
J
Collector-base Voltage 65 V
Collector-emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 4.5 A
Power Dissipation 80 W
Junction Temperature +200
Storage Temperature -65 to +150
Thermal DataThermal Data
R
TH(J-C)
MSC0943.PDF 10-28-98
Junction-case Thermal Resistance 2.2
°°C
°°C
°°C/W
140 COMMERCE DRIVE
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1226
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
BVcbo IC = 200 mA IE = 0 mA 65 --- --- V
BVces IC = 200 mA VBE = 0 V 65 --- --- V
BVceo IC = 200 mA IB = 0 mA 35 --- --- V
BVebo IE = 10 mA IC = 0 mA 4.0 --- --- V
Icbo VCB = 30 V IE = 0 mA --- --- 1.0 mA
H
FE
VCE = 5 V IC = 500 mA 10 --- 200 ---
DYNAMDYNAMICIC
P
OUT
G
P
IMD
Cob f = 1 MHz V
Condition
f = 30 MHz PIN = 0.48W V
f = 30 MHz PIN = 0.48W V
f = 30 MHz P
VCE = 28 V I
= 28V
CE
= 28V
CE
= 0.48W V
IN
= 30V --- --- 65
CB
= 25 mA
CQ
CE
= 28V
30 --- --- W
18 --- --- dB
--- ---- -28 dB
C
pf
MSC0943.PDF 10-28-98
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