Microsemi Corporation MRF951 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Fully Implanted Base and Emitter Structure.
• High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz
• Low Noise Figure – 1.3dB @ 1GHz
• Ftau - 8.0 GHz @ 6v, 30mA
• Cost Effective Macro X Package
MRF951
Macro X
DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 10 Vdc
Collector-Base Voltage 20 Vdc
Emitter-Base Voltage 1.5 Vdc
Collector Current 100 mA
Thermal Data
P
Tstg
T
Jmax
D
Total Device Dissipation @ TC = 75ºC
.475 Watts
Storage Junction Temperature Range
-65 to +150
Maximum Junction Temperature
150
ºC
ºC
MSC1326.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCEO Collector-Emitter Breakdown Voltage
(IC = 0.1 mAdc, IB = 0) 10 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 20 - - Vdc
ICBO Collector Cutoff Current
(VCE = 10 Vdc, VBE = 0 Vdc) - - 0.1
IEBO Collector Cutoff Current
(VCE = 1.0 Vdc, VBE = 0 Vdc) - - 0.1
(on)
HFE DC Current Gain
(IC = 5.0 mAdc, VCE = 6.0 Vdc) 50 - 200
MRF951
Min. Typ. Max. Unit
µA
µA
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
CCB Collector-Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ftau Current-Gain Bandwidth Product
(IC = 30 mAdc, VCE = 6 Vdc, f = 1.0 GHz)
MSC1326.PDF 10-25-99
-
-
.45 1.0 pF
8.0 - GHz
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