Microsemi Corporation MRF914 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz
• Low Noise Figure
NF = 2.5 dB (typ) @ f = 500 MHz
• High FT - 4.5 GHz (typ) @ IC = 20 mAdc
MRF914
2
1. Emitter
1
2. Base
3
3. Collector
4
4. Case
TO-72
DESCRIPTION:
Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching
applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 12 Vdc
Collector-Base Voltage 20 Vdc
Emitter-Base Voltage 3.0 Vdc
Collector Current 40 mA
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
200
1.6
mWatts
mW/ ºC
MSC1325.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) 12 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC= 0.1 mAdc, IE=0) 20 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - -
ICBO Collector Cutoff Current
(VCE = 15 Vdc, IE = 0 Vdc) - - 50 nA
(on)
HFE DC Current Gain
(IC = 20 mAdc, VCE = 10 Vdc) 30 - 200
MRF914
Min. Typ. Max. Unit
Vdc
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
f
T
CCB
Current-Gain - Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = .5 GHz) - 4.5 - GHz
Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz) - 0.7 - pF
Functional
Symbol Test Conditions Value
Min. Typ. Max. Unit
Maximum Available Gain
MAG
S
|21|
NF
G
max
MSC1325.PDF 10-25-99
(IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) - 12 - dB
Insertion Gain
(IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) 10 11 - dB
2
Noise Figure
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 500 MHz) - 2.5 - dB
Maximum Available Power Gain
(IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz)
-
15 - dB
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