Microsemi Corporation MRF904 Datasheet
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz
7 dB (typ) @ f = 1 GHz
• Low Noise Figure
NF = 1.5 dB (typ) @ f = 450 MHz
• High FT - 4 GHz (typ) @ IC = 15 mAdc
MRF904
2
1
3
4
TO-72
1. Emitter
2. Base
3. Collector
4. Case
DESCRIPTION:
Designed primarily for use IN High Gain, low noise general purpose amplifiers.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 15 Vdc
Collector-Base Voltage 25 Vdc
Emitter-Base Voltage 3.0 Vdc
Collector Current 30 mA
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
200
1.14
mWatts
mW/ ºC
MSC1324.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) 15 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC= .1 mAdc, IE=0) 25 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - -
ICBO Collector Cutoff Current
(VCE = 15 Vdc, IE = 0 Vdc) - - 50 nA
(on)
HFE DC Current Gain
(IC = 5.0 mAdc, VCE = 5 Vdc) 30 - 200
MRF904
Min. Typ. Max. Unit
Vdc
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
f
T
CCB
NF
MSC1324.PDF 10-25-99
Current-Gain - Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz) - 4.0 - GHz
Junction Capacitance
(VCB = 10Vdc, IE=0, f=1 MHz) - 1.0 1.5 pF
Noise Figure
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) - 1.5 - dB
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