Microsemi Corporation MRF607 Datasheet
140 COMMERCE DRIVE
FAX: (215) 631-9855
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor
• 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz
• 11.5 minimum Gain @ 12.5V, 175 MHz
• 50% Efficiency @ 12.5V, 175 MHz
(common collector)
MRF607
1. EMITTER
2
1
2. BASE
3
3. COLLECTOR
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 16 Vdc
Collector-Base Voltage 36 Vdc
Emitter-Base Voltage 4.0 Vdc
Collector Current 330 mA
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
3.5
28
Watts
mW/ ºC
MSC1322.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
BVCES Collector-Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0 Vdc) 36 - - Vdc
BVCEO Collector-Emitter Sustaining Voltage
(IC=25 mAdc, IB=0) 16 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = .5 mA, IC = 0) 4.0 - -
ICEO Collector Cutoff Current
(VCE = 10 Vdc, IB = 0) - - .3
(on)
HFE DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc) 20 - 150
MRF607
Min. Typ. Max. Unit
Vdc
mA
-
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
-
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
G
PE
η
C
MSC1322.PDF 10-25-99
Power Gain Test Circuit-Figure 1
Pout = 1.75W, VCE =
12.5Vdc
f = 175 MHz
Collector Efficiency Test Circuit-Figure 1
Pout = 1.75W, VCE =
12.5Vdc
f = 175 MHz
11.5 - - dB
50
- 15 pF
- - %
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