Microsemi Corporation MRF5943R2, MRF5943R1, MRF5943 Datasheet
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Low Cost SO-8 Plastic Surface Mount Package.
• S-Parameter Characterization
• Tape and Reel Packaging Options Available
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF5943, R1, R2
• Maximum Available Gain = 17dB @ 300MHz
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers,
Oscillators, etc.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 30 Vdc
Collector-Base Voltage 40 Vdc
Emitter-Base Voltage 3.5 Vdc
Collector Current 400 mA
Thermal Data
P
D
T
stg
R
θJA
MSC1321.PDF 10-25-99
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Temperature
Thermal Resistance, Junction to Ambient
1.0
8
150 ºC
125 ºC/W
Watts
mW/ ºC
MRF5943, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 30 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 40 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc
ICBO Collector Cutoff Current
(VCB = 20 Vdc, VBE = 0 Vdc) - - .01 mA
ICEO Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0 Vdc) - - .05 mA
(on)
HFE DC Current Gain
(IC = 50 mAdc, VCE = 15 Vdc) 25 - 300
VCE(sat) Collector-emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mA) .2
VBE(sat) Collector-emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mA) 1.0
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
Ftau Current-Gain Bandwidth Product
(IC = 35 mAdc, VCE = 15 Vdc, f = 100 MHz)
-
Vdc
Vdc
1.3 - GHz
MSC1321.PDF 10-25-99
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