Microsemi Corporation MRF5812R2, MRF5812, MRF5812R1 Datasheet
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• Low Noise - 2.5 dB @ 500 MHZ
• Associated Gain = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective SO-8 package
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF5812, R1, R2
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
V
CEO
V
CBO
V
EBO
I
C
Collector-Emitter Voltage 15 Vdc
Collector-Base Voltage 30 Vdc
Emitter-Base Voltage 2.5 Vdc
Collector Current 200 mA
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
1.25
10
Watts
mW/ ºC
MSC1319.PDF 10-25-99
MRF5812, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) 15 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0) 30 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 2.5 - - Vdc
ICBO Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc) - - 0.1 mA
IEBO Collector Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc) - - 0.1 mA
(on)
DYNAMIC
HFE DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc) 50 200
Symbol Test Conditions Value
Min. Typ. Max. Unit
COB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ftau Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
-
-
1.4 2.0 pF
5.0 - GHz
MSC1319.PDF 10-25-99
Loading...